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- The quality of buffer layer and thin films was analyzed by AFM, XRD, RHEED and XPS respectively. 采用原子力顯微鏡(AFM)、X射線(xiàn)衍射(XRD)、反射高能電子衍射(RHEED)和X射線(xiàn)光電子能譜(XPS)等表征方法,對碳化層的質(zhì)量和3C-SiC薄膜的結構進(jìn)行了表征。
- By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure. 從實(shí)驗的數據得知，在室溫下，樣品的矽發(fā)光強度隨著(zhù)注入電流的增加而有顯著(zhù)的增強；
- The product is separated from the principle of suction by the absorption layer, a buffer layer, integrated sound insulation layer formed. 該產(chǎn)品采用外隔內吸的原理，由吸聲層，緩沖層，隔聲層綜合而成。
- The reason is not made clear yet, but these results suggest that HVPE growth or an MN high temperature buffer layer gives a better quality GaN. 目前，其原因尚不清楚，但是這些結果表明采用HVPE生長(cháng)方法或用一高溫AlN阻擋層可以得到高質(zhì)量的GaN。
- We characterized the films through RHEED and AFM and found the buffer layer reduced the mismatch and improved the quality of ZnO films greatly. 通過(guò)室溫光致發(fā)光（PL）譜的測試分析，發(fā)現L-MBE生長(cháng)過(guò)程中氧壓對ZnO薄膜的結構缺陷濃度有很大影響。
- A simple model is presented to discuss the effect of ultra-thin buffer layer on the generation of misfit dislocations and strain relaxation in strained heterostructures. 摘要用一個(gè)簡(jiǎn)單模型討論了應變異質(zhì)結構中嵌入中間層對界面失配位錯產(chǎn)生和應變釋放的影響。
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用該論文 張福厚;宋珂;邢建平;郝修田;曾一平.
- Then we use Si wafer as substrate to grow InN QDs, and then AlN buffer layer will grow under high temperature(about 1050 oC) onto substrate, finally, InN QDs will grow internally onto buffer layer. 以單晶矽晶圓做為成長(cháng)氮化銦量子點(diǎn)之基板，接著(zhù)在高溫下(約1050度C)成長(cháng)氮化鋁緩沖層，最后用間歇性的方式成長(cháng)氮化銦量子點(diǎn)。
- Adjacent switchgears are isolated by its self side board, after putting the switchgears together, air buffer layer exist yet, it may prevent the switchgears from pronging and melted by electric arc. 相鄰的開(kāi)關(guān)柜由各自的側板隔開(kāi)，拼柜后仍有空氣緩沖層，可以防止開(kāi)關(guān)柜被故障電弧貫穿熔化。
- The results show that the introduction of a buffer layer structure of the GCT can adjust blocking characteristic and on-state characteristic well, and optimize the integrated characteristic of GCT. 模擬結果表明，引入緩沖層的GCT結構能夠很好地調節阻斷特性和通態(tài)特性，使GCT的綜合特性得以?xún)?yōu)化。
- We find a reduction in TD density in GaN films grown on graded AlxGa1-xN buffer layers, in comparison with those grown directly on a thin AlN buffer layer. 與那些直接生長(cháng)在A(yíng)lN薄膜上的GaN薄膜相比，生長(cháng)在組分漸變的AlxGa1-xN 緩沖層上的GaN薄膜內具有更少的螺位錯密度。
- Growth of transitional buffer layers may improve the interfacial lattice mismatch,which decreases the adhesion. 膜/基界面之間不匹配將使附著(zhù)力下降，可通過(guò)設置過(guò)渡層(梯度層)的方式加以解決。
- In the experiment, GaN buffer layers have been deposited on substrates with a nitrogen plasma as a nitrogen source and TEG as a Ga source. 實(shí)驗過(guò)程中,以氮等離子體為氮源,以三乙基鎵(TEG)鎵源,在藍寶石(Al_2O_3)襯底上生長(cháng)GaN緩沖層。
- The CeO_2 and Y_2O_3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. 采用反應濺射的方法在具有立方織構的Ni基底上制備了CeO2,Y2O3緩沖層。
- Hence, we deposited 7.5nm and 15nm LT-AlN as buffer layers on two samples, trying to make improvement on lattice quality. 因此，我們將兩個(gè)試片分別鍍上7.;5奈米及15奈米厚度的氮化鋁作為緩沖層，看看是否能對于晶體品質(zhì)上有實(shí)質(zhì)上的幫助。
- Higher growth temperature of buffer layers can lead to more strongly photoluminescence intensity. b) Effects of treatment processes. 光譜測試表明緩沖層生長(cháng)溫度越高，光致發(fā)光強度越強；
- A buffer in a drum used to temporarily store data. 磁鼓中用來(lái)暫時(shí)存放數據的一種緩沖區。
- It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. 在氮化矽緩沖層表面可以發(fā)現許多奈米尺寸大小的孔洞，其特性相信可提升之后氮化鎵側向的磊晶成長(cháng)。
- This layer of rock contains a lot of flint. 這一巖層中有大量燧石。
- Effect of Ta Buffer Layer in IrMn Top Spinvalve 頂釘扎自旋閥中Ta緩沖層的優(yōu)化研究
