The reason is not made clear yet, but these results suggest that HVPE growth or an MN high temperature buffer layer gives a better quality GaN.

 
  • 目前,其原因尚不清楚,但是這些結果表明采用HVPE生長(cháng)方法或用一高溫AlN阻擋層可以得到高質(zhì)量的GaN。
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