In the experiment, GaN buffer layers have been deposited on substrates with a nitrogen plasma as a nitrogen source and TEG as a Ga source.

 
  • 實(shí)驗過(guò)程中,以氮等離子體為氮源,以三乙基鎵(TEG)鎵源,在藍寶石(Al_2O_3)襯底上生長(cháng)GaN緩沖層。
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