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- Next, the epitaxy substrate is removed. 然后，移除磊晶基板。
- The higher value is comparable to those obtained in CVD epitaxy. 這個(gè)高的數值可以和從化學(xué)氣相淀積外延得到的數值相比擬。
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系數.;紅外與毫米波學(xué)報);
- The environmental morals have their intension , the epitaxy and main content. 環(huán)境道德有其內涵、外延和主要內容。
- GaP:N liquid phase epitaxy material photoluminescence light-emitting region. 標 簽 GaP:N液相外延材料 光致發(fā)光 發(fā)光區域。
- Podium was an OEM of epitaxy wafer growth and chip processing for both nationally and internationally renowned electronic manufacturers. 公司成立初期，主要為國內外知名半導體廠(chǎng)商生產(chǎn)外延片及芯片。
- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均勻的多孔陽(yáng)極氧化鋁做掩膜在氫化物氣相外延設備中生長(cháng)出高質(zhì)量的氮化鎵膜。
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇電子能譜儀(AES)對液相外延生長(cháng)的GaAs-AlxGa_(1-x)As異質(zhì)結構進(jìn)行了研究.
- The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced. 介紹了氣相中晶體生長(cháng)的方法,如輝光放電濺射法和離子束濺射沉積法以及晶體外延生長(cháng)的方法。
- Linguistic context restrains intension and epitaxy of saying " as the backgrounds of "speaking" . 語(yǔ)境作為一種“言說(shuō)”的知識背景制約著(zhù)“所說(shuō)”的內涵與外延。
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我將介紹分子束磊晶技術(shù)（ MBE ）的發(fā)明經(jīng)過(guò)、現況、和將來(lái)的發(fā)展。
- Cr3+-Activated YAG Monocrystalline Luminescent Layers Grown by Liquid Phase Epitaxy[J]. 引用該論文 饒海波;成建波;黃宗琳;李軍建;方官久.
- The impurity concentration profile depends on epitaxy growth velocity, growth time and impurity diffusion coefficient. 如果雜質(zhì)的擴散系數很小，雜質(zhì)在外延層中的深度分布是均勻的。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 驚詫于這樣的人還不是中國的院士，實(shí)在很煩。
- Now we look forward to working with the AIXTRON true high temperature capable epitaxy system. 現在他們正期待使用AIXTRON提供的高溫外延系統，以期在氮化物研究方面取得巨大進(jìn)展。
- In this thesis, two topics related to the epitaxy of CoSi2 and its application are studied. 在八英寸Si（100）襯底上利用Co/Si和Co/Ti/Si固相反應分別制備了多晶和外延CoSi2薄膜，通過(guò)四探針薄層電阻法（FPP）、X射線(xiàn)衍射（XRD）、掃描電子顯微鏡（SEM）、透射電子顯微鏡（TEM）等手段，研究了CoSi2薄膜的結構、CoSi2薄膜與硅襯底接觸的界面狀況、CoSi2薄膜的外延質(zhì)量、高溫穩定性、以及自對準工藝窗口。
- We have grown PbTe films on Si(111) and Si (100) substrates by using Hot Wall Epitaxy (HWE) technology. 我們采用熱壁外延(Hot Wall Epitaxy，縮寫(xiě)為HWE)技術(shù),在Si(111)和Si(100)襯底上外延生長(cháng)PbTe薄膜。
- A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown. 研制成功了可商業(yè)化的 75mm單片超高真空化學(xué)氣相淀積鍺硅外延設備SGE50 0 ;并生長(cháng)了器件級SiGeHBT材料 .
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge結構的電致發(fā)光單晶膜,最低起亮電壓為6V。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生長(cháng)BaTiO3(BTO)鐵電薄膜。
