A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE).

 
  • 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge結構的電致發(fā)光單晶膜,最低起亮電壓為6V。
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