您要查找的是不是：
- Pb(Zr0.52Ti0.48)O3 (PZT) and (Ba0.7Sr0.3)TiO3 (BST) ferroelectric thin films with distinct perovskite microstructure were prepared by RF magnetron sputtering method ,following a rapid thermal annealing (RTA) process. 應用射頻磁控濺射方法;利用快速熱退火(RTA)工藝;分別制備出了具有良好鐵電性能的 Pb(Zr0.;52Ti0
- The simulated annealing method is applied to the simulation of ultrasonic echo in this paper. 摘要本文應用模擬退火算法來(lái)改進(jìn)超聲回波模擬問(wèn)題。
- In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. 中文摘要在此篇論文里，使用快速熱退火去形成鎳化矽的制程被研究。
- This paper uses a modified GA (MGA), in which simulated annealing method is introduced. 本文將遺傳算法進(jìn)行改進(jìn)，引入了退火選擇思想，算法的收斂速度和尋找全局最優(yōu)解的能力都有較大提高。
- Af-ter thermal annealing about 60% of radiation damage induced by implantation can be restored. 在熱退火后,約60%25的注入引起的輻射損傷可以得到恢復。
- In introducing imitate anneal method genetic algorithm, undertake optimizing to multi-parameter problem. 將模擬退火方法引入遺傳算法中,對多參數問(wèn)題進(jìn)行優(yōu)化。
- Effects of thermal annealing on the dielectric properties of PZN-PT-BT system ceramics were studied. 考察了退火熱處理對PZN-PT-BT陶瓷介電性能和介電弛豫的影響。
- A simulated annealing method is used to study the microphase separation and crystallization in cylinder-forming semicrystalline diblock copolymers. 利用模擬退火方法研究非對稱(chēng)半結晶兩嵌段共聚物熔體分別在弱分離和強分離條件下的結晶過(guò)程。
- The behaviour of infrared rapid thermal annealing (IRTA) of GaAs MESFET active layer and n+ layer formed by Si+ implantation is studied. 本文研究了GaAs MESFET有源層和n~+層Si~+注入的紅外快速退火行為。
- Mathematical model is calculated with linear approximation method, general compound shape method and blend genetic anneal method. 采用線(xiàn)性逼近法、一般復合形法、混合遺傳退火算法等方法對所建數學(xué)模型進(jìn)行了求解。
- Moreover, after rapid thermal annealing (RTA), the TE dominant peaks can be changed to transverse-magnetic (TM)-field-enhanced and vice versa. 并且，在快速熱退火(RTA)之后，原本橫向電波主宰的波峰能轉變成橫向磁波主宰，反之亦然。
- We utilized rapid thermal annealing (RTA) and laser induced annealing (LIA) processes to form nickel silicide and discussed the role of amorphous silicon in annealing process. 我們分別利用快速熱退火與雷射引致退火形成矽化鎳并討論非晶矽在退火制程中所扮演的角色。
- The experimental results indi cate that the Nf and Nit of laser- recrystallized specimens are much lower than those of non recrystallized samples with thermal annealing. 結果表明,和未再結晶的熱退火樣品相比,激光再結晶后,背界面的界面態(tài)密度大幅度下降。
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅層上快速熱退火(RTA)形成的多晶硅化鎳膜的電特性。
- The ZrCl4, HfCl4, and SiCl4 were used as the sol-gel precursors to form the hafnium and zirconium silicate after rapid thermal annealing at high temperature. 我們以四氯化鋯、四氯化鉿及四氯化矽為溶膠-凝膠溶液之前驅物，旋轉涂布于晶圓上形成薄膜，經(jīng)高溫退火后形成含有鋯及鉿之金屬矽氧化物。
- In this paper, the influences of conventional furnace annealing (CFA) and rapid thermal annealing (RTA) and annealing time on STO films were systematically studied. 系統研究了CFA與RTA兩種熱處理方式以及熱處理溫度和時(shí)間對STO薄膜微結構的影響。
- The SSA approach, an improvement of Simulated Annealing method (SA), hybridizes the downhill simplex method with the SA method such that SSA possesses the advantages of fast convergence and ability for a global minimum. 單純形-模擬退火算法將單純形法搜尋機理嵌入到模擬退火算法的基本思想,綜合了模擬退火算法全局搜索能力強、單純形算法局部收斂速度快的優(yōu)點(diǎn),是對常規模擬退火算法的一個(gè)改進(jìn)。
- Another noteworthy feature is that the inhomogeneous oxidation of as-deposited HfN film is examined and transferred into the homogeneous HfOxNy film after thermal annealing. 另一個(gè)值得注意的現象是對于剛沉積的氮化鉿薄膜中，即已經(jīng)出現了不均勻的氧化，但經(jīng)過(guò)后續的高溫制程處理將轉變成為均勻的氮氧化鉿薄膜。
- The combined method optimized by genetic algorithm based on simulated annealing method that combines the different estimative results of some mathematics solves this problem successfully. 基于最小二乘法原理和模擬退火遺傳算法的數據預處理組合方法，綜合了各種處理方法的結果，很好地解決了這個(gè)問(wèn)題。
- Firstly, we analysis the physics model of measurement system, then we advanced the optimized model and its solution using Penalty Function Method, Simplex Evolution Method and Simulate Anneal Method. 在分析了測量的輻射物理模型的基礎上,提出了優(yōu)化重建模型,進(jìn)而提出了將罰函數法、模擬退火法、單純形法結合起來(lái)的切實(shí)可行的重建算法。
