The behaviour of infrared rapid thermal annealing (IRTA) of GaAs MESFET active layer and n+ layer formed by Si+ implantation is studied.是什么意思_The behaviour of infrared rapid thermal annealing (IRTA) of GaAs MESFET active layer and n+ layer formed by Si+ implantation is studied.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句