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- ZnO film got by spin coating as the electron transport layer, MEH-PPV as the hole transport layer, a new structure of electroluminescence device was fabricated. 并且對此結構的雙層器件進(jìn)行了不同顆粒尺寸的ZnO納米顆粒薄膜的對比研究。;
- The spin coating is followed by a baking step to remove the solvent and, in some cases, to complete the polymerization. 接著(zhù)以烘烤除去溶劑，有時(shí)候可以順便完成聚合反應。
- When an inhomogeneous plane wave is introduced into a dense dielectric layer, it can bounce between the two boundaries. 把一非均勻平面波引進(jìn)折射率較高的介質(zhì)層時(shí)，它會(huì )在上下界面間來(lái)回地“彈”射。
- TiO_2 nano thin film was prepared on ITO glass substrate by dip coating and spin coating process. 以TiCl_4和C_(16)H_(36)O_4Ti溶膠為前驅體,分別采用旋轉-涂覆法和浸漬-提拉法制備了納米TiO_2薄膜。
- Tunneling allows voltage to flow from the control gate to the floating gate through the dielectric layer of oxide which separates them. 允許從隧道流電壓控制的浮動(dòng)柵柵絕緣層氧化物通過(guò)分隔他們。
- We prepared two kinds of OLED devices by spin coating, which have three-layer structures[a:ITO/MEH-PPV/Al] and [b: ITO/MEH-PPV/Ca:Al]. 我們利用MEH-PPV為發(fā)光材料制備了兩種結構電致發(fā)光器件:a.;ITO/MEH-PPV/Al和b
- Dual damascene technology of Cu / low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices. 介紹了銅/低介電常數介電層的雙嵌入式工藝,該工藝已大規模應用于動(dòng)態(tài)記憶存儲器(DRAM)和邏輯電路器件中。
- The chemical is widely used in the production of LSI,VLSI and other semiconductors to remove photoresist edge bead that occurs during typical spin coat wafer processing. 該試劑用于清除勻膠后殘留于硅片邊緣及背面的光刻膠，已經(jīng)廣泛應用于中、大規模集成電路及其它半導體器件的生產(chǎn)。
- Especially, the quality of gate dielectric layer determines the reliability and electrical performance of ultra large scale integrated (ULSI) circuit. 特別是閘極介電層的品質(zhì)能決定ULSI電路的穩定度與電特性表現。
- We focus on how the processes in repaid thermal processor (RTP) affect the electrical characteristics quality of gate dielectric layer. 我們將會(huì )集中以快速熱制程如何影響介電層電特性。
- The TiO_2 nano thin film prepared by spin coating process is white, while the TiO_2 nano thin film made by dip coating process is colorless and transparent. 以TICl_4為通過(guò)旋轉.;涂覆法制備的納米TiO_2薄膜;表觀(guān)為白色不透明膜;而以C_(16)H_(36)O_4Ti為前驅體選用浸漬-提拉法制備的薄膜為無(wú)色透明膜。
- And the conclusion is presented too.It is easy to design and manufacture waveguide filter using dielectric layer PBG structures. 利用介質(zhì)層PBG結構來(lái)制作波導濾波器具有設計簡(jiǎn)單、易于實(shí)現的顯著(zhù)優(yōu)點(diǎn)。
- We show the reflection and transmission behaviors when SPPs propagate along the metallic surface with one dimensional dielectric layer coated. 我們進(jìn)一步討論了表面等離子體激元在一維結構正入射時(shí)的反射性質(zhì)，以及完全帶隙的構造，和初步的實(shí)驗結果。
- NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer. 在閘極與高介電常數介電層間使用氮化矽可有效抑制負偏壓溫度不穩定性的現象。
- While the top electrode is located on the third dielectric layer, in which each third dielectric layer and its top electrode compose a stack structure. 而上電極是位于第三介電層上，其中由每一第三介電層與其上的上電極組成一個(gè)堆棧結構。
- Dual damascene technology of Cu/ low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices. 介紹了銅/介電常數介電層的雙嵌入式工藝,該工藝已大規模應用于動(dòng)態(tài)記憶存儲器(RAM)邏輯電路器件中。
- In this thesis, a simple and effective slurry spin coating approach (as a patent applied by us) was developed for fabricating Sm0.2Ce0.8O1.9 (SDC) films for anode-supported solid oxide fuel cells. 本論文應用我們發(fā)明的簡(jiǎn)單;高效的漿料旋涂制膜方法;制備陽(yáng)極支撐的固體氧化物燃料電池Sm0.;2Ce0
- In this thesis, we provide a new .fabrication: using nanoparticles to fabricate erbium doped luminescence thin film.We mix nanoparticles and use spin coating process to deposit it on a silicon wafer. 這篇論文提出新的制程方法：使用奈米粒子制作摻鉺發(fā)光薄膜，利用奈米粒子混合旋布玻璃并旋涂于矽基板上。
- Takashi O., Luis B.M., Ferry I., Kikuo O.,“Fabrication of a large area monolayer of silica particles on a sapphire substrate by a spin coating method”, Colloids and Surfaces A, Physicochem.Eng. 王惠君，“以回應曲面法探討溶膠-凝膠法制備奈米二氧化矽之參數影響”，中原大學(xué)化學(xué)工程學(xué)系，2004。
- I got a new coat in that store last week. 上禮拜我在那家店買(mǎi)了一件新外套。
