NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer.是什么意思_NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句