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- After glow Microwave plasma enhanced CVD system 隔離行微波等離子體增強型CVD系統
- Multiple parallel plate electrode plasma enhanced CVD system 多平行電極等離子體增強型
- Preparation of B-N Films by Remote Microwave Plasma Enhanced CVD from Borazine B_3N_3H_6微波等離子體增強化學(xué)氣相沉積B－N薄膜
- plasma enhanced CVD 等離子體增強CVD
- DLC films were deposited by capacitively coupled radio frequency plasma enhanced chemical vapor deposition. 頂層DLC膜用容式耦合射頻等離子體增強化學(xué)氣相沉積方法制備。
- A example of new approaches to functionalization of nonwovens using plasma enhanced modification of nonwovens was presented. 介紹一種運用等離子處理來(lái)改善非織造材料表面性能的新方法。
- Without doping,plasma enhanced chemical vapor deposition (PECVD) of silica films on Si substrates with gas mixtures of SiH_4 and N_2O is considered. 以硅烷和氧化二氮作為反應氣體,采用等離子體增強化學(xué)氣相沉積(PECVD)技術(shù),不使用摻雜,在單晶硅襯底上制備了用于平面光波導的二氧化硅薄膜。
- However, high cost, complicated ductwork, and assistant equipments such as plasma enhancing and electron cyclotron resonance are usually involved in most conventional atmospheric pressure CVD apparatus. 1) 搭建了三套低成本的CVD裝置，它們分別是簡(jiǎn)單CVD裝置，單一源化學(xué)氣相淀積裝置，ZnO薄膜的水汽外延裝置。
- Fluorinated diamond-like carbon(F-DLC) films were grown by RF plasma enhanced chemical vapor deposition(PECVD) in a gas mixture of CF4 and CH4 and annealed in Ar environment. 以CF4和CH4為源氣體,利用射頻等離子體增強化學(xué)氣相沉積法,在不同條件下制備了氟化類(lèi)金剛石(F-DLC)薄膜,并進(jìn)行了退火處理。
- The a-Si films is deposited by plasma enhanced chemical vapor deposition technique with the optimum technology.The AC resistively of sample is measured. 用化學(xué)氣相沉積法在最佳工藝條件下制備了非晶硅薄膜,測量了樣品的交流電阻率。
- Nitrogen doped fluorinated diamond-like carbon(FN-DLC)thin films is deposited using radio frequency plasma enhanced chemical vapor deposition under different radio-frequency power with CF_4,CH_4 and N_2 as source gases. 以CF4;CH4和N2為源氣體;采用射頻等離子體增強化學(xué)氣相沉積法;在不同射頻功率下制備了含氮氟化類(lèi)金剛石薄膜樣品.
- The application and features of vaccum strip coating processes such a thermal jet evaporation, magnetron sputtering, electron-beam evaporation and plasma enhanced EB evaporation process were reviewed. 摘要介紹了新一代連續帶鋼鍍膜技術(shù)－真空鍍膜的工藝特點(diǎn)及應用現狀。
- Using plasma enhanced chemical vapor deposition system, intrinsic hydrogenated nanocrystalline silicon films and P-doped ones have been fabricat ed. The dependence of Raman shift on the grain size and doping concentration has been systemically studied. 通過(guò)等離子增強化學(xué)氣相沉積法 ;制備了本征和摻磷的氫化納米硅薄膜 (nc- Si:H) ;研究了晶粒尺寸和摻雜濃度對納米硅薄膜喇曼譜的影響 .
- The vertically aligned carbon nanotubes( CNTs) were synthesized on Au/Ni catalyst films by plasma enhanced hot filament chemical vapor deposition( PE HFCVD) method at 96% concentration of hydrogen. 以金鎳復合膜作催化劑,在96%25的高氫氣濃度下實(shí)現了碳納米管的定向生長(cháng),并對其生長(cháng)過(guò)程進(jìn)行了深入探討。
- Stretchable Si films were prepared on single crystal Si wafer with plasma enhance chemical vapor deposition(PECVD). 利用等離子輔助化學(xué)氣相沉積方法在單晶硅基底表面制備出可延展的硅薄膜。
- plasma enhanced chemical vapor deposition 等離子體增強化學(xué)氣相沉積
- plasma enhanced chemical vacuum deposition (PECVD) 等離子體增強化學(xué)氣相沉積
- plasma enhanced chemical vapor deposition (PCVD) 等離子體增強化學(xué)氣相沉積（PCVD）
- plasma enhanced chemical vapor deposition(PECVD) 等離子體增強化學(xué)氣相沉積
- plasma enhanced chemical vapour deposition 等離子體增強化學(xué)沉積
