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- GaP:N liquid phase epitaxy material photoluminescence light-emitting region. 標 簽 GaP:N液相外延材料 光致發(fā)光 發(fā)光區域。
- liquid phase epitaxial method 液相外延法
- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均勻的多孔陽(yáng)極氧化鋁做掩膜在氫化物氣相外延設備中生長(cháng)出高質(zhì)量的氮化鎵膜。
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇電子能譜儀(AES)對液相外延生長(cháng)的GaAs-AlxGa_(1-x)As異質(zhì)結構進(jìn)行了研究.
- Cr3+-Activated YAG Monocrystalline Luminescent Layers Grown by Liquid Phase Epitaxy[J]. 引用該論文 饒海波;成建波;黃宗琳;李軍建;方官久.
- Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE). 利用喇曼光譜和光致發(fā)光譜 ;對采用氫化氣相外延淀積方法在MOCVDGaN襯底上生長(cháng)的摻碳GaN樣品的光學(xué)性質(zhì)進(jìn)行了研究 .
- ZnO thin films can be deposited by various methods, such as sputtering, e-beam evaporation, spray pyrolysis, sol-gel, pulsed laser deposition (PLD), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), etc. 制備ZnO薄膜的方法有很多，包括：濺射方法(sputtering)、金屬有機氣相外延(MOVPE)、分子束外延(MBE)、脈沖激光沉積(PLD)、原子層外延(ALE)、等離子體加強化學(xué)氣相沉積(PECVD)、溶膠-凝膠法(soll-gel)、噴涂熱解法(spray pyrolysis)、電子束蒸發(fā)法(e-beam evaporation)等等。
- A technique is presented for the vapour phase epitaxy of GaxIn1-xAs in the system of AsCl3/Ga/In/H2 using a Ga/In alloy sources it is characteristic of excellent reproducibility, homogeneity and ease-to-obtain GaxIn1-xAs layers with high purity. 本文描述了一種汽相外延Ga_xIn_(1-x)As的技術(shù):在A(yíng)sCl_3/Ga/In/H_2體系中,采用Ga/In合金源汽相生長(cháng)Ga_xIn_1As。
- metallo organic vapor phase epitaxy 有機金屬汽相外延
- Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated. 研究了在刻有圖形的GaN“襯底”上用HVPE方法側向外延生長(cháng) (ELO)GaN的結構特性。
- LIQUID PHASE EPITAXY OF InSb_(1-x)Bi_x InSb_(1-x)Bi_x的液相外延
- The microstructure and optical properties of epitaxial laterally overgrown (ELO) GaN films on Si (III) substrate by hydrade vapor phase epitaxy (HVPE) have been investigated. 用氫化物氣相外延 (HVPE)方法在Si(III)襯底上成功橫向外延生長(cháng)出晶體質(zhì)量較好的GaN薄膜材料。
- Hydride Vapor Phase Epitaxy (HVPE) HVPE
- Metal Oxide Vapour Phase Epitaxy 金屬氧化物蒸汽相外延
- metalorganic vapor phase epitaxy 金屬有機物氣相外延
- X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy X射線(xiàn)分析氫化物汽相外延法生長(cháng)GaN薄膜
- Vapor Phase Epitaxy of Hg_(1-x)Cd_xTe on CdTe substrates 在CdTe襯底上汽相外延Hg_(1-x)Cd_xTe
- THE CHARACTERISTICS OF ACEL IN ZnS:Er~(3+) THIN FILMS GROWN BY ATOMIC LAYER EPITAXY METHOD (ALE) 利用原子層外延方法制備的ZnS:Er~(3+)薄膜的交流電致發(fā)光特性
- In this work, more attention has been paid to the nano-twins and the evolution of solid phase epitaxial regrowth in the annealed specimens. 本實(shí)驗將研究重點(diǎn)置于離子布植矽退火后的雙晶結構以及固相磊晶成長(cháng)的的演變。
- Design and making of hydride vapor phase epitaxy system for growing GaN GaN氫化物氣相外延生長(cháng)系統的設計與制作
