A technique is presented for the vapour phase epitaxy of GaxIn1-xAs in the system of AsCl3/Ga/In/H2 using a Ga/In alloy sources it is characteristic of excellent reproducibility, homogeneity and ease-to-obtain GaxIn1-xAs layers with high purity.是什么意思_A technique is presented for the vapour phase epitaxy of GaxIn1-xAs in the system of AsCl3/Ga/In/H2 using a Ga/In alloy sources it is characteristic of excellent reproducibility, homogeneity and ease-to-obtain GaxIn1-xAs layers with high purity.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句