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- Pt-GaAs Schottky barrier APDs have been investigated. Pt-GaAs肖特基勢壘雪崩光電探測器已研制成功。
- As an example, Schottky barrier diode characteristics is simulated using this method. 以肖特基勢壘二極管為例，應用該方法，實(shí)現了高接觸勢壘情形下的正反向電流模擬。
- The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). 基于 Ti Si2 低電阻率的優(yōu)點(diǎn) ,采用 Ti制作肖特基二極管。
- The electron irradiation-induced failure mechanism of n-type Au/GaN Schottky barrier UV detectors is investigated. 研究了n型Au/GaN肖特基勢壘紫外光探測器的電子輻照失效機理。
- Yet another object is to form a Schottky barrier between a semiconducting material and an active electrode. 還有另一個(gè)目的是在半導體材料與有源電極之間形成肖特基勢壘。
- When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 當我們在矽基板上形成矽化鎳時(shí)，將會(huì )有蕭特基接面存在其間。
- The electron beam induced current (EBIC) character of palladium silicide-silicon (P-type)Schottky Barrier Diode (SBD) is observed. 本文用EBIC法對SBD元件進(jìn)行了觀(guān)測。
- When the Schottky barrier height(Eb)is higher than 0.6 eV,any increase in Eb can result in apparent reduction in the DSSC maximum power output. 當TiO2/TCO的肖特基勢壘(Eb)大于0.;6eV時(shí);DSSC的最大功率輸出值隨Eb的增大而明顯降低。
- The typical structure and fabrication technology of the iridium silicide Schottky barrier infrared detectors(IrSi-SBIRDs)are discussd. 本文討論了硅化銥肖特基勢壘紅外探測器(IrSi-SBIRD)的典型結構和其制作技術(shù);
- The mean Schottky barrier height and lowest ideality factor were found to be 1.24eV and 1.03, respectively, as measured by (I - V). 電流 -電壓測量得到肖特基勢壘平均高度和理想因子分別為 1 .;2 4 e V、1
- Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二極管D1和D2，而不是普通二極管，為的是減少總線(xiàn)上低狀態(tài)電壓，改進(jìn)噪聲極限。
- One proposed that the formation mechanism of IrSi/Si Schottky barrier should be correlated with the chemical bonds between IrSi and Si atoms at interface. 提出了IrSi/Si肖特基勢壘形成機理與界面處IrSi和Si原子的化學(xué)鍵密切相關(guān)。
- The structure features operation principle of charge sweep device(CSD) and their application in the Schottky barrier infrared focal plane array(SBIFPA) are reviewed in this paper. 本文介紹了CSD圖像傳感器的結構、特點(diǎn)、工作原理及其在肖特基勢壘紅外焦平面列陣(SBIFPA)中的應用情況。
- In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss. 同步整流技術(shù)采用低導通電阻的MOS管代替導通壓降相對較大的快恢復二極管或肖特基二極管,大大減小了輸出整流損耗,效率相對提高。
- The Schottky barrier height is increased, and the ideality factor is decreased to unity with decreasing the Pd grain size and particle size distribution. 論文后段則探討以無(wú)電鍍法制備之鈀/砷化鎵以及鈀/氧化層/砷化鎵元件于氫氣感測效果之差異，并探討不同鈀膜微結構對于氫氣感測性能之影響。
- Using the processes with lowest formed damage and AuGeNi/Au/GaAs ohmic contact, Al/AlGaAs Schottky barrier, polyimide pro-tecting film, we have developed the InGaAs/AlGaAs PM-HEMT. 采用低應力、低損傷工藝程序,以AuGeNi/Au形成源漏歐姆接觸,Al形成柵肖特基勢壘接觸,聚酰亞胺介質(zhì)為鈍化膜,制成了InGaAs/AlGaAs贗配HEMT。
- The circuit is composed of four doubler circuits using four Schottky barrier diodes (HP-HSMS-8102). A RF-to-DC conversion efficiency of 45.4% has been achieved at an input power level of 24.5 dBm with 300W DC load. 本文設計的整流裝置采用四個(gè)HP-HSMS-8102肖特基二極管組成四個(gè)并聯(lián)的倍壓電路;在24.;5 dBm輸入功率下(直流負載為300W)測得其整流效率達到了45
- A systematical and intensively study of Schottky barrier and the whole device of GaAs MESFET has been presented in this paper. To the weaknesses of conventional method , the author put forward the Temperature Ramp Measurement (TRM) . 本實(shí)驗對GaAs MESFET柵Schottky勢壘接觸及整體器件進(jìn)行了較為系統和深入的研究，針對目前常規評價(jià)方法不能適應當前微電子器件快速發(fā)展的需要而出現的諸多問(wèn)題，提出了恒定應力下的溫度斜坡法（簡(jiǎn)稱(chēng)TRM法），動(dòng)態(tài)觀(guān)察和分析器件退化全過(guò)程，并應用此方法成功給出了實(shí)驗樣品的壽命預測值和失效率。
- According to experimental results, the mechanism of leakage current instability is given as due to an increase in Z+n density at the grain surface. Consequently, the Schottky barrier at the ZnO grain surface is decreased and the leakage current increased. 根據實(shí)驗結果;提出漏電流不穩定性的機理是鋅離子在晶粒表面積累;降低了氧化鋅表面肖特基勢壘的高度;使漏電流上升.
- Based on the thermionic emission theory of the current density of 4H-SiC Schottky barrier diodes under the forward bias, the calculations for the Schottky barrier height ? eff and the specific on-resistance R on are presented. 在分析 4H SiC肖特基勢壘二極管正向電流熱電子發(fā)射理論的基礎上 ;計算了肖特基勢壘高度?eff和串聯(lián)電阻Ron.
