A systematical and intensively study of Schottky barrier and the whole device of GaAs MESFET has been presented in this paper. To the weaknesses of conventional method , the author put forward the Temperature Ramp Measurement (TRM) .
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- 本實(shí)驗對GaAs MESFET柵Schottky勢壘接觸及整體器件進(jìn)行了較為系統和深入的研究，針對目前常規評價(jià)方法不能適應當前微電子器件快速發(fā)展的需要而出現的諸多問(wèn)題，提出了恒定應力下的溫度斜坡法（簡(jiǎn)稱(chēng)TRM法），動(dòng)態(tài)觀(guān)察和分析器件退化全過(guò)程，并應用此方法成功給出了實(shí)驗樣品的壽命預測值和失效率。
