Based on the thermionic emission theory of the current density of 4H-SiC Schottky barrier diodes under the forward bias, the calculations for the Schottky barrier height ? eff and the specific on-resistance R on are presented.

 
  • 在分析 4H SiC肖特基勢壘二極管正向電流熱電子發(fā)射理論的基礎上 ;計算了肖特基勢壘高度?eff和串聯(lián)電阻Ron.
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