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- CMOS Devices Isolated by an Implanted Silicon Nitride Layer 離子注入氮化硅隔離的CMOS器件
- On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT. 與此同時(shí),制備高質(zhì)量的柵絕緣層用氮化硅薄膜也是制備高性能薄膜晶體管(TFT)這一課題的需要。
- The first is a silicon nitride window sandwich (picture below). 第一種是氮化硅夾心窗（下圖）。
- Too high of a surface temperature will result in a silicon nitride reaction. 表面溫度過(guò)高容易導致硅、氮發(fā)生反應。
- The picokeystone is trapped between the two silicon nitride windows. 小楔塊兒陷于兩個(gè)氮化硅窗體中間。
- The maximum x-directional strain of NMOS channel is 0.6% when the model is gave 1GP of the intrinsic stress of the silicon nitride capping layer under a temperature loading of -400K. 對于奈米結構而言，本研究所建立之模擬方式可詳盡探討彎矩對應變矽之力學(xué)行為，并可依此對NMOS元件進(jìn)行分析與設計。
- The common ceramic used for SKF bearing rings and rolling elements is a bearing grade silicon nitride material. 常用于SKF軸承套圈和滾動(dòng)體的陶瓷材料是軸承級的氮化硅材料。
- Hybrid bearings have rings of bearing steel and rolling elements of bearing grade silicon nitride (Si3N4). 陶瓷混合軸承具有軸承鋼的套圈和軸承級氮化硅的滾動(dòng)體(Si3N4)。
- The invention relates to a manufacturing method of a titanium nitride layer as well as an apparatus thereof. 本發(fā)明涉及一種氮化鈦層的制造方法及其裝置。
- Under insufficient lubrication conditions there is no smearing between silicon nitride and steel. 在潤滑不充分的條件下,氮化硅和鋼之間不會(huì )發(fā)生沾污。
- It is also used as the etchant for etching Aluminum and Silicon Nitride film in semi-silicon IC. 在硅平面晶圓集成電路生產(chǎn)中，用于鋁及氮化硅的蝕刻；
- Sintering aids were one of key factors affecting microstructure and properties of silicon nitride ceramics. 燒結助劑是影響氮化硅陶瓷的顯微結構和性能的關(guān)鍵因素之一。
- This paper presents the dielectric and mechanical properties of porous silicon nitride ceramics. 研究了預燒結對反應燒結多孔氮化硅陶瓷的介電性能和力學(xué)性能的影響。
- The effect of holding time on intergranular phase and mechanical property of GPS silicon nitride ceramics was studied. 研究了保溫時(shí)間對氣壓燒結(GPS)氮化硅陶瓷晶界相及力學(xué)性能的影響。
- It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily. 通常認為高頻下制備得到的氮化硅膜呈現張應力;但是通過(guò)實(shí)驗;表明即使應用高頻(13.;56MH z)作為激勵源同樣可以沉積出呈現壓應力的氮化硅薄膜。
- Silicon nitride ceram is widely used as a high-temperature structural material and is one of the most promising materials. 氮化硅陶瓷廣泛用作高溫結構材料，是很有前途的陶瓷材料之一。
- The nitride layer was formed on the surface of ductile cast iron by gas multi-element penetration, and the phase structure and section appearance of nitride layer were analyzed by the XRD and SEM. 球墨鑄鐵經(jīng)過(guò)氣體多元共滲后可在其表面形成氮化層,通過(guò)X射線(xiàn)衍射和掃描電鏡對滲層的相結構與形貌進(jìn)行分析。
- From X-ray photoelectron spectroscopy (XPS) experiments, the presence of Si clusters in the silicon nitride films was confirmed. 對不同富矽量的氮化矽薄膜做了紅外和光致發(fā)光的比較研究。
- At present, our company mainly produces ceramic balls, ceramic bearings and ceramic rings which are made of silicon nitride, zirconia or alumina. 產(chǎn)品包括陶瓷球、陶瓷軸承、陶瓷刀杯環(huán)、陶瓷結構件四大類(lèi)領(lǐng)域。
- In-situ porous silicon nitride ceramics were prepared directly by the use of silicon dioxide through the carbothermal reduction in nitrogen. 本課題就是利用二氧化硅在氮氣中的碳熱還原反應，一次原位直接制備氮化硅多孔陶瓷預制體。
