The maximum x-directional strain of NMOS channel is 0.6% when the model is gave 1GP of the intrinsic stress of the silicon nitride capping layer under a temperature loading of -400K.是什么意思_The maximum x-directional strain of NMOS channel is 0.6% when the model is gave 1GP of the intrinsic stress of the silicon nitride capping layer under a temperature loading of -400K.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句