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- Application of B Spline Function in DC Characteristics Simulation of Short Channel MOS Device B樣條函數在短溝道MOS器件直流特性模擬中的應用
- This paper chooses BSIM3 (Berkeley short-channel IGFET model) the model to be extracted, which is for short channel MOS Field Effect transistor specially. 本論文選取目前業(yè)界占主流地位的BSIM3(Berkeley short-channel IGFET model)為將要提取的模型，它是專(zhuān)門(mén)為短溝道MOS場(chǎng)效應晶體管而開(kāi)發(fā)的一種模型。
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本論文中提出雙材料雙閘完全解離絕緣體上矽金氧半元件在直流與交流的分析。
- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究結果顯示，降低無(wú)電鍍鍍浴之組成：如整體鍍浴濃度、前驅鹽濃度、還原劑濃度等變因，均將使鈀膜粒徑減小，分布均勻。而所得元件之二極體電性愈佳。
- A threshold voltage model of the short channel DMOS (Double-Diffusion Metal-Oxide- Semiconductor) is proposed. 該文提出了短溝DMOS閾值電壓模型。
- In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. 第一章主要是針對鰭狀場(chǎng)效電晶體元件做一個(gè)簡(jiǎn)介，說(shuō)明鰭狀場(chǎng)效電晶體元件如何從傳統的金氧半元件演化而來(lái)，并提出一個(gè)三閘鰭狀場(chǎng)效電晶體元件。
- The influences of these factors on the short channel effects are also discussed and explained. 這些因素對于短通道效應的影響也會(huì )在論文里討論與解釋。
- Therefore, short channel effects in polycrystalline silicon thin-film transistors are investigated clearly. 因此，我們能更清楚研究發(fā)生在復晶矽薄膜電晶體里的短通道效應。
- In this paper,the author analyzed the parasitic resistances model of short channel MOSFETs,inves-tigate the reason why the error is large at the low Vg. 該文分析了短溝道寄生電阻模型,研究了短溝道寄生電阻模型在柵壓較小時(shí)與模擬結果存在較大誤差的原因,并對模型進(jìn)行了改進(jìn)。
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 經(jīng)由適當的設計MOS元件的參數，我們可以在 其電流-電壓特性曲線(xiàn)上得到負微分電阻的特性。
- p type channel MOS intergrated circuit p溝MOS集成電路
- p type channel MOS integrated circuit p溝MOS集成電路
- As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. 當金氧半元件縮小至深次微米區域，矽氧化層的厚度也隨之變薄。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面態(tài)引起的器件特性的退化是深亞微米器件失效的一個(gè)重要因素。
- Finally the thesis discusses a fourfold voltage charge pump only has 8 MOS devices, even 7 MOS. 本文在6管交叉耦合電荷泵的基礎上提出了一種8(7)管4倍電荷泵。
- The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper. 本文從不同方面對BF_2~-注入MOS管低劑量率輻照效應進(jìn)行了深入的研究。
- MOS devices have to suffer from ionizing radiation as they are widely used in theenvironment of space, nuclear energy and nuclear weapon. 隨著(zhù)航天技術(shù)、核能技術(shù)及其核武器等高技術(shù)的迅速發(fā)展,越來(lái)越多的MOS器件需要在電離輻射環(huán)境中工作。
- Your work falls short of my expectations. 你的工作未達到我的期望。
- Our escape was little short of miraculous. 我們能逃脫簡(jiǎn)直是個(gè)奇跡。
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二維模擬軟件Medici對以ZrO:為柵介質(zhì)的體硅MOS器件和501 MOS器件的性能進(jìn)行了模擬。 系統模擬了以ZrO:為柵介質(zhì)的體硅MOS器件和常規MOS器件性能對比，以及ZrO:為柵介質(zhì)的501 MOS器件的性能與常規501 MOS器件性能的對比。
