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- The presence of a large density of contaminant causes anomalous increases in the diode current with increasing reverse bias. 大量沾污也會(huì )使二級管電流隨反向偏壓的增加而呈現反常的增大。
- This condition, known as reverse bias, is not conducive to current flow through the junction. 這種叫做反向偏置的狀態(tài)不利于電流穿越結。
- The photo-current was found to closely follow the eletro-absorption at large reverse bias values. 在很大的反向偏壓下,光電流緊隨著(zhù)電吸收發(fā)生變化。
- One measure of the quality of a diode is its leakage current at a specified reverse bias voltage. 衡量二極管質(zhì)量的一個(gè)方面就是在規定的反向偏置電壓下的泄漏電流。
- During IGBT is off, the gate should be provided reverse bias voltage for ensuring the safe of IGBT. 在IGBT關(guān)斷期間，IGBT的柵極需加反向偏置電壓，避免IGBT的誤動(dòng)作。
- The gain of the APD can be controlled by the magnitude of the reverse bias voltage. APD的增益可以由反向偏置電壓的幅度來(lái)控制。反向偏置電壓越大增益就越高。
- The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer. 位移電流的機理只對反向偏壓或要維持空間電荷層所需要的非常弱的正向偏壓條件下的電容器才有用。
- The silicon light emitting device also can be used as a photoreceiver under reverse bias, receiving the light emitted from the other one. 此發(fā)光元件在反偏下也可當成光接收元件，接收來(lái)自同結構順偏元件所發(fā)出的光。
- As long as the base-collector junction remains reverse biased, increasing base current will cause a corresponding increase in collector current, and the transistor remains in active mode. 擬譯：只要基極-集電極還處于反偏狀態(tài)，上升的基極電流就會(huì )相應地引起集電極電流的上升，此時(shí)的三極管仍處于放大狀態(tài)。
- The currents of the detectors at no bias voltage and reverse bias voltage of 2V were obtained when they were illuminated by light beams of 362nm and 368nm scanning across the active region of the detectors, respectively. 分別用362nm和368nm光束對有源區進(jìn)行橫向掃描,得到了光照不同部位時(shí)探測器在無(wú)偏壓、2V反向偏壓下的電流。
- For Au/Ge-Si02/p-Si andAu/Si-SiO,/p-Si structures, they emit EL peaked at 5lOnm when forward biaseswere greater than 6V and 6.5V, respectively, while no detectable lightemission can be observed under reverse bias. 對于A(yíng)u/Ge-SiO_2/p-Si和Au/Si-SiO_2/p-Si結構，當所加正向偏壓分別高于6V和6.;5V時(shí)都發(fā)出肉眼可見(jiàn)的EL，峰位均在510nm處； 在反向偏壓下，沒(méi)有光發(fā)出。
- The formula for calculating the effective impurity concentration in the abrupt junction, the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction. 利用pn結反向偏壓時(shí)的電容特性推導了有效雜質(zhì)濃度隨深度分布的計算公式及突變結和線(xiàn)性緩變結的1/(C2)-V和1/(C3)-V關(guān)系圖。
- Secondly, the SiGe-based BiCMOS light emitting device is used as photo detector, when a reverse bias is applied. Photo currents are measured and the photo detecting characteristics are studied. 第二部分則利用設計之矽鍺基金氧半元件逆向操作，以光照產(chǎn)生光電流，觀(guān)察其作為光偵測器的特性。
- He devises a new type of transistor. 他發(fā)明了一種新的晶體管。
- Zero adjustment function,forward adjust is forward biased,reverse adjust is reverse biased. 零點(diǎn)調整功能，順時(shí)針調整可以偏負，逆時(shí)針調整可以偏正。
- The old man always carries about a transistor. 這位老人總是隨身攜帶一臺晶體管收音機。
- D1 is a protection diode that prevents the be junction of Q2 from be reverse biased. 如果僅僅是為了保護，完全可以在Q2發(fā)射極串聯(lián)一個(gè)二極管代替，
- Typical stressing like under the E-B reverse biasing results in some traps near the E-B spacer oxide and interface states in EB junctions. 傳統的反向偏壓射極-基極接面驅迫所造成的熱載子會(huì )在靠近基極和射極接面以及隔離基極-射極的絕緣層上產(chǎn)生接面陷阱(traps)和帶電荷的接面能態(tài)(interfacestate)，而影響其直流特性上的電性反應。
- The committee is of a/has a conservative bias. 委員會(huì )有一種保守的偏見(jiàn)。
- He has a bias against Japanese products. 他討厭日本的產(chǎn)品。
