Typical stressing like under the E-B reverse biasing results in some traps near the E-B spacer oxide and interface states in EB junctions.
英
美
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傳統的反向偏壓射極-基極接面驅迫所造成的熱載子會(huì )在靠近基極和射極接面以及隔離基極-射極的絕緣層上產(chǎn)生接面陷阱(traps)和帶電荷的接面能態(tài)(interfacestate),而影響其直流特性上的電性反應。
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