The formula for calculating the effective impurity concentration in the abrupt junction, the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction.
英
美
- 利用pn結反向偏壓時(shí)的電容特性推導了有效雜質(zhì)濃度隨深度分布的計算公式及突變結和線(xiàn)性緩變結的1/(C2)-V和1/(C3)-V關(guān)系圖。
