For Au/Ge-Si02/p-Si andAu/Si-SiO,/p-Si structures, they emit EL peaked at 5lOnm when forward biaseswere greater than 6V and 6.5V, respectively, while no detectable lightemission can be observed under reverse bias.
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美
- 對于A(yíng)u/Ge-SiO_2/p-Si和Au/Si-SiO_2/p-Si結構,當所加正向偏壓分別高于6V和6.;5V時(shí)都發(fā)出肉眼可見(jiàn)的EL,峰位均在510nm處; 在反向偏壓下,沒(méi)有光發(fā)出。