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- The drain current Ids depends on Vgs with an index of 2.5. 實(shí)驗結果表明改進(jìn)的模型更精確;Ids與Vgs的呈2.;5次方的指數關(guān)系
- The low quiescent drain current of the device insures good regulation when this method is used. 當這個(gè)方法被使用時(shí)，設備的低的靜止的排水管電流保險好規則。
- The experimental results indicate:hydrogen decreases the Schottkybarrier height(SBH)of Au/n-Si by0.13eV,the SBH of Schottcky barrier containinghydrogen(SB(H))can be controlled by zero bias annealing(ZBA)and reverse biasannealing(RBA),i. 實(shí)驗結果表明：氫能使Au/n－Si的肖特基勢壘高度下降0.;13eV； 含氫的肖特基勢壘的高度可以被零偏退火與反偏退火所控制，即零偏退火使含氫的肖特基勢壘的高度降低，而反偏退火使含氫的肖特基勢壘的高度升高；
- By these ways, we successfully improve drain current and mobility of NMOS and PMOS. 此外，本論文并探討應變矽在低溫時(shí)，不同散射機制對電性的影響。
- By this way, we successfully improve drain current and mobility of NMOS into 12% and 6%, respectively. 利用此方法，我們成功提高NMOS的汲極電流與載子遷移率，提升幅度分別為12%25與6%25。
- The spectrum of the whole drain current waveform (Fig. 21) is presented in Fig. 23. 全部漏極電流波形產(chǎn)生的電磁干擾頻譜（圖21）呈現在圖23。
- As it can be seen the drain current and drain to source voltage slopes can be adjusted simply using the external gate resistor during turn on and off transients. 顯而易見(jiàn)，開(kāi)通和關(guān)斷過(guò)程的漏極電流、漏源極電壓變化速率可以簡(jiǎn)單的通過(guò)外置柵極驅動(dòng)電阻進(jìn)行調整。
- The peak values of the drain current have been varied in discontinuous (2A, 6A, 11A) and continuous (2A, 6A) conduction modes. 漏極的峰值電流被設定為斷續電感電流模式下的2安培、6安培、11安培和連續電感電流模式下的2安培。
- In this work, one emphasis is put on the nonlinear modeling of LDD MOSFET, wherein the drain current Ids is the key of the MOS equivalent circuit. 首先通過(guò)分析總結典型的短溝MOS器件模型的建模原理和適用范圍，建立了適用于深亞微米、超深亞微米LDD NMOSFET的簡(jiǎn)捷器件模型(Compact model)。
- Therefore, we successfully improve drain current and carrier mobility of NMOS, and the increasing rates are 22% and 30% respectively. 利用此方法，我們成功提高NMOS的汲極電流與載子遷移率，提升幅度分別為22%25與30%25。
- A model of drain current degradation of DSM NMOSFET devices induced by HCI and implementation in circuit reliability simulation is proposed. 摘要提出一種深亞微米NMOSFET的熱載流子注入下漏電流退化模型及其電路退化仿真方法。
- The analysis of the drain current of the primary switch will be done in the same way. Fig. 21 demonstrates a typical drain current in a DCM flyback. 對一次側開(kāi)關(guān)的漏極電流進(jìn)行分析采用相同的方法。圖21展示出一個(gè)工作于電感電流斷續模式反激變換器的典型漏極電流。
- This waveform can be presented as a superposition of the following elements (Fig. 22 and Tab. 5). The superposition of all these elements results in a typical drain current shown in Fig. 21. 這個(gè)波形可以被看作是下列原理的疊加(圖22和平臺5).;全部這些波形的疊加整合結果變成圖21所示的典型漏極電流
- CONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS BIAS ANNEALING AND REVERSE BIAS ANNEALING 零偏退火與反偏退火對含氫的Au/n－Si肖特基勢壘的控制
- The mercury dived to ten below zero. 溫度突然下降到零下10度。
- The committee is of a/has a conservative bias. 委員會(huì )有一種保守的偏見(jiàn)。
- He has a bias against Japanese products. 他討厭日本的產(chǎn)品。
- That maths exam I took was a regular brain drain. 絞盡腦汁的數學(xué)測驗，我真是絞盡了腦汁。
- Now, men, zero in your guns at that ship. 喂，伙計們，把炮口對準那艘船。
- It was five below zero last night. 昨夜溫度是零下五度。
