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- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各類(lèi)硅外延片。
- There are three proce dures in LED production, namely epitaxial wafer, tube core and encapsulation. 在LED生產(chǎn)過(guò)程中，主要有外延片生長(cháng)、芯片和封裝三個(gè)環(huán)節。
- From the point of view of industrial chain, value of epitaxial wafer accounts for 70% of the total. 從產(chǎn)業(yè)價(jià)值鏈的情況看，外延片的生長(cháng)要占到70%25的價(jià)值。
- Backwardness in high quality epitaxial wafer has limited greatly the development of Chinese LED industry. 高質(zhì)量的外延片已經(jīng)成為中國LED產(chǎn)業(yè)發(fā)展的主要制約環(huán)節。
- But in some key procedures, especially epitaxial wafer, there is still great gap compared with international first class level. 但是在關(guān)鍵環(huán)節，尤其是外延片的生長(cháng)環(huán)節，與世界一流水平還有較大的差距。
- The performance of model WB30 is the same as the 1S2209/1S2208 VHF/UHF silicon epitaxial planar tuning diode made by NEC company. 結果表明WB30型VHF/UHF硅電調變容管已與日本NEC公司的VHF/UHF硅外延平面電調變容管1S2209/1S2208的性能相當.;電調變容管的統調特性及其串聯(lián)電阻直接與電視高頻頭的增益相關(guān)
- In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研制的超高真空化學(xué)氣相淀積(UHV/CVD)系統SGE500,在N型(摻As)重摻雜襯底上進(jìn)行了薄本征硅外延層生長(cháng)規律的研究; 并采用擴展電阻(SPR)、原子力顯微鏡(AFM)、雙晶衍射(DCXRD)等方法,對外延層的質(zhì)量進(jìn)行了評價(jià)。
- In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results. 本文分析了三探針測試硅外延片中雪崩擊穿時(shí)耗盡層寬度的面接觸模型,理論和實(shí)驗結果吻合。
- Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses. 從CB管腳對微波低噪聲NPN晶體管2SC3356施加低電壓人體模型(HBM)的ESD應力;發(fā)現;隨著(zhù)ESD應力次數的增加;器件的放大特性hFE逐漸退化;并且當電壓達到一定水平;多次的ESD可以使器件失效.
- silicon epitaxial planar transistor 硅外延平面晶體管
- Silicon Epitaxial Planar Capacitance Diode 硅外延平面變容二極管
- silicon epitaxial highcurrent switching diode 硅外延大電流開(kāi)關(guān)二極管
- low-pressure silicon epitaxial technique 低壓硅外延生長(cháng)技術(shù)
- Podium was an OEM of epitaxy wafer growth and chip processing for both nationally and internationally renowned electronic manufacturers. 公司成立初期，主要為國內外知名半導體廠(chǎng)商生產(chǎn)外延片及芯片。
- silicon epitaxial planer transistor 硅外延平面晶體管
- Silicon on sapphire epitaxial wafers GB/T14015-1992硅-藍寶石外延片
- The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings. 四探針?lè )ㄓ迷诜浅１〉臉悠?，例如外延晶圓片和導電涂層上。
- Now people can produce a wafer silicon. 現在人們能夠生產(chǎn)一種硅晶薄片。
- silicone epitaxial planar transistor 硅外延平面晶體管
- Hot plate with silicon wafer lowered to heating position. 加熱板與矽晶圓降低至加熱位置。
