Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses.
英
美
- 從CB管腳對微波低噪聲NPN晶體管2SC3356施加低電壓人體模型(HBM)的ESD應力;發(fā)現;隨著(zhù)ESD應力次數的增加;器件的放大特性hFE逐漸退化;并且當電壓達到一定水平;多次的ESD可以使器件失效.