In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods.
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- 文章利用自行研制的超高真空化學(xué)氣相淀積(UHV/CVD)系統SGE500,在N型(摻As)重摻雜襯底上進(jìn)行了薄本征硅外延層生長(cháng)規律的研究; 并采用擴展電阻(SPR)、原子力顯微鏡(AFM)、雙晶衍射(DCXRD)等方法,對外延層的質(zhì)量進(jìn)行了評價(jià)。
