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- Abstract: The characteristics and progress of lithography technique and plasma etching technology are summarized.Their physical mechanisms and current research problems are also explained. 文摘:介紹了光刻與等離子體刻蝕技術(shù)的特點(diǎn)與進(jìn)展，闡述了等離子體刻蝕的物理機制與前沿問(wèn)題.
- The reactor is capable of working in the RIE (reactive ion etching) mode and also in the plasma etching mode. 反應腔擁有在RIE(反應離子刻蝕)模式和等離子刻蝕模式下工作的能力。
- Dow etching: A powerless etching technique for letter-press plates invented by Dow Chemical Corporation. 陶氏腐法:陶氏化學(xué)公司發(fā)明的一種無(wú)粉腐技巧。用來(lái)制造活版印版。
- Dow etching A powerless etching technique for letter-press plates invented by Dow Chemical Corporation. 陶氏腐法陶氏化學(xué)公司發(fā)明的一種無(wú)粉腐技巧。用來(lái)制造活版印版。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab-built ECR plasma etching system. 摘要電子迴旋共振(ECR)等離子體以其密度高、工作氣壓低、均勻性好、參數易于控制等優(yōu)點(diǎn)在超大規模集成電路工藝中獲得了廣泛的應用。
- This thesis considers the delamination behaviors between substrate and molding compound for Ball Grid Array (BGA) products caused by the plasma etching process. 中文摘要本文針對陣列錫球封裝產(chǎn)品基板和膠餅間所產(chǎn)生的分層作研究。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab built ECR plasma etching system. 電子回旋共振(ECR)等離子體以其密度高、工作氣壓低、均勻性好、參數易于控制等優(yōu)點(diǎn)在超大規模集成電路工藝中獲得了廣泛的應用。
- It is necessary to measure Young's modulus of micro-mained materials because of the special manufacture process by using silicon etching technique. 摘要利用蝕刻矽技術(shù)制造的微機械構件，由于特殊的制作工藝而需要對其材料的楊氏模量進(jìn)行測量。
- Lising KOH anisotropic wet etching technique to obtain the V-shape structure of fiber array.This technique apply precrision alignment to control undercut effective. 利用KOH非等向性濕蝕刻技術(shù)，得到光纖陣所需之V型凹槽結構，并配合精確對準光罩之應用，有效控制側蝕量，應用于光纖陣列晶圓制程技術(shù)。
- In this thesis, etched walls with verticality of better than 89? and Root-mean-Square (RMS) surface roughness of below 10 nm are achieved by using non-switched Inductivity Coupled Plasma (ICP) etching technique. 論文采用無(wú)切換的電感耦合等離子體刻蝕(ICP)技術(shù)在SOI材料上刻蝕出垂直度好于89°、均方根表面粗糙度小于10nm的刻蝕側壁。
- We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating.The performance is evaluated by measuring the reflectance spectrum and contact angle. 實(shí)驗上，我們采用全像微影術(shù)、電漿蝕刻以及旋鍍鐵氟龍的方式來(lái)制作試片，并量測該試片的反射頻譜和接觸角。
- An in-situ particle monitor was installed on a plasma etch tool chamber.This article includes a discussion of two major problems detected on the plasma etch tool within a three-week period. 在等離子體蝕刻工具主艙內安裝一個(gè)現場(chǎng)粒子監測器,對兩個(gè)主要問(wèn)題進(jìn)行了三周的測試并展開(kāi)了討論。
- It is necessary to measure the mechanical properties such as Yong's modulus of micro\|machined materials because of the special manufacturing process by using silicon etching technique. 利用蝕刻硅技術(shù)制造的微機械構件,由于特殊的制作工藝而需要對其材料的機械性能如楊氏模量等進(jìn)行測試。
- Three potentials pertinent to various etching techniques are labeled in Fig. 10. 與各種蝕刻技術(shù)有關(guān)的三個(gè)電勢標出在圖10中。
- Produces relief plates for letterpress printing by photo-mechanical and washout or etching techniques. 運用照相復制及腐蝕技術(shù)制備凸版以供印刷。
- The Research on Plasma Etching Photoresists 等離子體腐蝕去膠的探討
- LITHOGRAPHY AND PLASMA ETCHING TECHNOLOGY 光刻與等離子體刻蝕技術(shù)
- Etching Techniques by an ECR Plasma Source 電子回旋共振等離子體的刻蝕技術(shù)
- inductively coupled plasma etching 電感耦合等離子體刻蝕
- A type of transistor in which very thin barriers ( by means of etching techniques ) are used, thus permitting the frequency range to be extended to 100 MHz. 使用很薄勢壘的一類(lèi)晶體管(采用刻蝕技術(shù)),因而,其使用頻率范圍可達100兆赫。
