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- The dynamics of thermal reaction of Ge(111) surface with chlorine molecules has been studied using molecular beam relaxation spectrometry (MBRS). 本文用分子束弛豫譜研究了Ge(111)表面與氯分子熱反應動(dòng)態(tài)學(xué)。
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系數.;紅外與毫米波學(xué)報);
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我將介紹分子束磊晶技術(shù)（ MBE ）的發(fā)明經(jīng)過(guò)、現況、和將來(lái)的發(fā)展。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 驚詫于這樣的人還不是中國的院士，實(shí)在很煩。
- To narrow the molecular beam (water group), adjusting the molecular structure of volatility. 縮小分子束(水分子集團)，調整分子結構波動(dòng)。
- Crossed molecular beam studies of reaction dynamics 尤其是利用交叉分子束研究反應動(dòng)力學(xué)
- Reaction Dynamics via Molecular Beam and Laser 分子束和激光束反應動(dòng)態(tài)學(xué)
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge結構的電致發(fā)光單晶膜,最低起亮電壓為6V。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生長(cháng)BaTiO3(BTO)鐵電薄膜。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技術(shù)在半絕緣GaAs襯底上生長(cháng)制備了不同結構的AlAs/GaAs/InGaAs兩壘一阱RTD單管.
- Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用電感耦合等離子體(ICP)裝置對分子束外延(MBE)法在Sapphire襯底上生長(cháng)的Zn1-xMgxO薄膜的Mg組分進(jìn)行了測試.
- O-chlorophenol/water mixed clusters were studied using both laser multiphoton ionization mass spectrum and supersonic pulsed molecular beam technique. 應用激光多光子電離質(zhì)譜與超聲脈沖分子束技術(shù)研究鄰氯苯酚-水的混合團簇。
- Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最后我們使用固態(tài)分子束磊晶器，以砷化銦/砷化鎵量子點(diǎn)作為活性層，磷化銦鎵作為被覆層制作半導體雷射并量測其特性。
- Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生長(cháng)出多種鈣鈦礦氧化物薄膜和異質(zhì)結。
- Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control. 分子束外延（Molecular beam epitaxy, MBE）是一種在超高真空條件下，使分子或原子按晶體排列一層層地“長(cháng)”在基片上形成薄膜的技術(shù)。
- Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community. 瑞博是一個(gè)制造分子束外延設備的公司，其設備在化合物半導體領(lǐng)域處于領(lǐng)先地位。
- The distribution of atomic or subatomic particles in a system, as in a magnetically resolved molecular beam, arranged in order of masses. 能譜：系統（如經(jīng)磁力分解的分子束）中，原子與亞原子微粒根據質(zhì)量順序排定的分布
- The microstructure of BaTiO 3 (BTO)/ SrTiO 3 (STO) superlattice grown on (001)SrTiO 3 substrate by laser molecular beam epitaxy (L MBE) was investigated. 本實(shí)驗研究利用激光分子束外延法 (L%25DMBE)研究在SrTiO3(STO) (0 0 1)基片上生長(cháng)的BaTiO3(BTO) /SrTiO3(STO)超晶格的微結構 .
- The characteristics of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) with different growth temperature of GaAs spacer or growth rates were studied. 本篇論文探討分子束磊晶成長(cháng)砷化銦/砷化鎵量子點(diǎn)的特性隨著(zhù)不同砷化鎵空間層的成長(cháng)溫度或成長(cháng)速率的變化。
- Especially, laser molecular beam epitaxy (L-MBE) plays an important role in the preparing of high quality nanometer thin films and in layer by layer growth of superlattice. 指出脈沖激光沉積技術(shù)在探討激光與物質(zhì)相互作用和薄膜成膜機理方面的作用，尤其是激光分子束外延技術(shù)在高質(zhì)量的納米薄膜和超晶格人工設計薄膜的制備上顯現出的巨大潛力。
