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- InP／InAlAsInP/InAls
- InGaAs/InAlAsInGaAs/InAIAs
- InAlAs／InGaAsInAlAs/InGaAs
- InGaAs／InAlAsInGaAs/InAlAs
- InAlAs量子點(diǎn)材料的AFM和拉曼散射研究AFM and Raman Scattering Study of InAlAs Quantum Dots
- InP襯底InP substrate
- InP／SiInP/Si
- InP納米晶indium phosphide nanocrystallite
- GaAs／InPGaAs/InP
- 本文通過(guò)數值求解含時(shí)Schrodinger方程得到了InGaAs/InAlAs共振隧穿二極管 (RTD)的電流 偏壓曲線(xiàn) ,我們發(fā)現數值模擬的結果與實(shí)驗符合得很好。The current voltage(I V) characteristics for InGaAs/InAlAs RTD are computed numerically by solving the time dependent Schrodinger equation. The results are good agreement with the experiment.
- MBE生長(cháng)的In_(1-x-y)Ga_xAl_yAs/InP四元混晶的拉曼散射Optical Phonon Raman Scattering from In 1-x-y Ga xAl yAs/InP Quaternary Alloys
- InGaAs／InPInGaAs/InP
- InP／InGaAsInP/InGaAs
- InP／空氣隙InP/air-gap
- InP-on-GaAslnP-on-GaAs
- GaAsSb/InPGaAsSb/InP
- InGaAs/InPInGaAs/InP
- InP/GaP界面InP/GaP interface
- InP/InGaAsPInP/InGaAsP
- 低壓MOCVD外延生長(cháng)InGaAsP/InP應變量子阱材料與器件應用InGaAsP/InP Strained Layer Quantum Well Materials Grown by LP-MOCVD and Their Device Applications
