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- 報道了InP襯底AlAs/In0.53Ga0.47As/AlAs兩壘一阱結構共振隧穿二極管(RTD)器件的研制.The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode(RTD)device are reported.
- InP襯底InP substrate
- InP襯底AlAs/In_(0.53)Ga_(0.47)As RTD的研制Research on InP-Based AlAs/In_(0.53)Ga_(0.47)As RTD
- InP襯底GaAs張應變層上InAs量子點(diǎn)的原子力顯微鏡分析AFM Analysis of InAs Quantum Dots on GaAs Tensile Strained Layer on InP Substrate
- 襯底婦女緊身胸衣A foundation garment.
- 襯底點(diǎn)陣substrate lattice
- 襯底漏電substrate leakage
- 襯底強度substrate strength
- 共襯底common substrate
- 襯底平行度substrate parallelism
- 襯底切割鋸substrate dicing saw
- 有源襯底active substrate
- 軟襯底soft substrate
- 鋁襯底aluminum substrate
- Si襯底Si substrate
- AAO襯底AAO substrate
- 陶瓷襯底釉ceramic substrate glaze
- 互連層襯底interconnection substrate
- ITO襯底ITO substrate
- 小襯底narrow filling
