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- InAs量子點(diǎn)InAs quantum dots
- 在InP(001)基襯底上用分子束外延方法生長(cháng)InAs納米結構材料,通過(guò)襯底的旋轉與否及混合生長(cháng)模式,得到了兩種InAs量子點(diǎn)和量子線(xiàn),并研究了量子點(diǎn)、線(xiàn)的光學(xué)性質(zhì)。InAs nano-structure material grew on the InP(OOl) substrate by molecular beam epitaxy. InAs quantum dots and quantum nano-wires were obtained and their properties of photolumi-nescence were studied by varying the growing condition of InAs epitaxial layer, respectively.
- InAs量子點(diǎn)在肖特基勢壘二極管輸運特性中的影響THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE
- 近紅外波段InAs量子點(diǎn)結構與光學(xué)特性Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band
- 含多層InAs量子點(diǎn)的雙肖特基勢壘二極管輸運特性研究CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER
- InAs/GaAs自組織生長(cháng)量子點(diǎn)結構中浸潤層光致發(fā)光研究Photoluminescence Studies of Wetting Layer in InAs/GaAs Self-Organized Quantum Dot Structures
- Ge量子點(diǎn)Ge quantum dots
- ZnO量子點(diǎn)ZnO quantum dot
- 量子點(diǎn)540QD540
- 柱形量子點(diǎn)cylindrical quantum dot
- 阱內量子點(diǎn)dot-in-well QD
- 雙層量子點(diǎn)double-layer quantum dots
- 拋物量子點(diǎn)parabolic quantum dot
- CdSe量子點(diǎn)CdSe QDs
- 耦合量子點(diǎn)coupled quantum dot
- 無(wú)機量子點(diǎn)inorganic quantum dots
- GaN基量子點(diǎn)GaN based quantum dots
- Ge/Si量子點(diǎn)Ge/Si quantum dots
- 量子點(diǎn)玻璃quantum dot glass
- 量子點(diǎn)分子quantum dot molecule
