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- Ge量子點(diǎn)Ge quantum dots
- 退火過(guò)程中自組織生長(cháng)Ge量子點(diǎn)的變化Evolution of Self-Organized Ge Quantum Dots During Ultra High Vacuum Annealing
- 微腔調制常溫Ge量子點(diǎn)光致發(fā)光特性Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate
- 用超高真空化學(xué)氣相淀積系統在Si(1 0 0 )襯底上生長(cháng)了多層Ge量子點(diǎn) .Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD).
- ZnO量子點(diǎn)ZnO quantum dot
- 采用超高真空化學(xué)氣相淀積系統制備了小尺寸、高密度、縱向自對準的Ge量子點(diǎn) .Small size, large density and vertical ordering Ge quantum dots (QDs) were grown by ultra-high vacuum chemical vapor deposition(UHV/CVD) system.
- 量子點(diǎn)540QD540
- 柱形量子點(diǎn)cylindrical quantum dot
- 在超高真空化學(xué)汽相淀積設備(UHV/CVD)上生長(cháng)了小尺寸、大密度、垂直自對準的Ge量子點(diǎn)。Small size,large density and vertical ordering Ge quantum dots(QDs)were grown by UHV/CVD system. AFM study was carried out to optimize growth temperature and time.
- 阱內量子點(diǎn)dot-in-well QD
- 雙層量子點(diǎn)double-layer quantum dots
- 最后對上述內容進(jìn)行小結,并對Ge量子點(diǎn)共振腔增強型光電探測器的應用前景進(jìn)行了探討與展望。The underling importance of the Ge quantum dot resonant cavity enhanced photodetector is discussed and its prospects are offered.
- 拋物量子點(diǎn)parabolic quantum dot
- CdSe量子點(diǎn)CdSe QDs
- InAs量子點(diǎn)InAs quantum dots
- 耦合量子點(diǎn)coupled quantum dot
- 無(wú)機量子點(diǎn)inorganic quantum dots
- GaN基量子點(diǎn)GaN based quantum dots
- 量子點(diǎn)玻璃quantum dot glass
