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- Flash memory can be easily erased and reprogrammed. 閃存可以很方便地擦除和改寫(xiě)。
- Support save to flash memory card directly, never lost your save. 存檔備份到存儲卡,絕不掉檔。
- Flash memory at the maximum 72 MHz system clock rate. 最大能到系統時(shí)鐘的速度，不過(guò)前提是順序指令結構。
- The company will comprise the flash memory units of Intel and STMicro. 新公司由英特爾和意法半導體的閃存部門(mén)組成。
- For our common valuable Flash Memory, StarFans arround thr world, UNITE! 為了我們共同的寶貴閃存，全世界的星迷們聯(lián)合起來(lái)！
- There is also some diversity among FLASH memory products with respect to the programming method. 另外還有一些flash的差異，即寫(xiě)入的方式。
- Windows Vista uses ATA-8 commands to define the disk data to be held in the flash memory. Windows Vista使用ATA-8命令來(lái)定義要在閃存中存放的磁盤(pán)數據。
- The Design of a Portable Flash Device Driver 可移植閃存驅動(dòng)設計
- SQL Server Compact Edition supports external storage devices, including Compact Flash memory and drives. SQL Server Compact Edition支持外接存儲設備,包括Compact Flash內存和驅動(dòng)器。
- Each bit of data in a flash memory device is stored in a transistor called a floating gate. 每一個(gè)比特的數據儲存在快閃記憶裝置稱(chēng)為浮柵晶體管。
- Common storage devices include external hard disk drives and flash memory cards. 常用的可移動(dòng)媒體包括CD和DVD光盤(pán)以及可移動(dòng)存儲卡。
- The NAND flash memory and USB2.0 interface are introduced in the design of Dynamic Electrocardiogram to improve the DCG's performance and convenience. 在傳統動(dòng)態(tài)心電圖機的設計基礎上;提出應用大容量NAND閃存和高速USB2.;0接口;提高心電圖機的性能和易用性。
- It was used JTAG interface to download the program to the FLASH memory of C8051F020. 并把程序用JTAG接口下載到C8051 F020的FLASH存儲器中。
- For Flash memory,I introuce the principle of NOR Flash and NAND Flash, and how their drivers implemented. 對Flash閃存驅動(dòng),分別介紹了NOR Flash和NAND Flash的原理以及它們的驅動(dòng)實(shí)現。
- All the controlling program can be downloaded to 4K byte flash memory in single chip computer . AT89C51單片機內含128字節RAM和4K字節快閃存儲器(Flash Memory)，因此，全部控制程序可裝入單片機。
- Meanwhile, studios and retailers are poised to introduce movie-download kiosks, using flash memory. 同時(shí)，制造公司和零售商都準備在推出使用閃存的電影下載亭。
- The major purpose of this paper is to study and implement the fast Nand type flash memory, denoted by FNandFlash. 本論文的主要目的是研究與實(shí)作一顆快速的反及閘快閃記憶體，使其可應用到大量?jì)Υ婷襟w中。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通過(guò)實(shí)驗研究了閃速存儲器存儲單元中應力誘生漏電流(ILC)產(chǎn)生機理.
- In addition, the performance of flash memory with the nanocrystal as the charge trapping layer was also demonstrated. 此外，我們利用溶膠-凝膠法形成之奈米微晶粒材料運用于快閃式記憶體元件中作為記憶體元件之電荷捕陷層，并探討其電性表現。
- Bob tuned in his portable radio to a record show. 鮑伯收聽(tīng)手提收音機的唱片廣播。
