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- The nitride on oxide layers remains intact. 氧化物表層上面的氮化物保持原狀不動(dòng)。
- Comparative study on nitride and phosphide . 因此，較大的還原氣空速易于形成較高的催化劑比表面積。
- A trademark used for an abrasive of boron nitride granules. 氮化硼用于一種由氮化硼微粒組成的磨料的商標
- A trademarkused for an abrasive of boron nitride granules. 氮化硼用于一種由氮化硼微粒組成的磨料的商標。
- Gallium Nitride - New Material for Microwave and Optoelectronics. 氮化鎵-微波與光電元件的新材料。
- This is because of the impurity nitride(MmNn) in glass. 本文認為這是玻璃內部所含的雜質(zhì)氮化物(MmNn)所致。
- The first is a silicon nitride window sandwich (picture below). 第一種是氮化硅夾心窗（下圖）。
- Its comprehensive coverage focuses on aluminum nitride substrates. 它的廣泛報導集中在鋁氮化物基體。
- Too high of a surface temperature will result in a silicon nitride reaction. 表面溫度過(guò)高容易導致硅、氮發(fā)生反應。
- Titanium nitride offers the customer wear protection in jet engine bearings. 氮化鈦提供了客戶(hù)的抗磨損保護的噴氣發(fā)動(dòng)機軸承。
- Jelenski, A."Gallium Nitride - New Material for Microwave and Optoelectronics. "氮化鎵-微波與光電元件的新材料.
- Koya S, Yutaka W. Jointing Nitride Ceramics[P]. JP: 07011305, 1995-10-16. 專(zhuān)利專(zhuān)利所有者．題名（正體，實(shí)詞首字母大寫(xiě)）[P]．國別：專(zhuān)利號，出版日期
- The picokeystone is trapped between the two silicon nitride windows. 小楔塊兒陷于兩個(gè)氮化硅窗體中間。
- Boron carbon nitride(BCN) thin films were deposited by radio frequency(RF) magnetron sputtering. 采用射頻磁控濺射技術(shù)制備出硼碳氮(BCN)薄膜。
- The common ceramic used for SKF bearing rings and rolling elements is a bearing grade silicon nitride material. 常用于SKF軸承套圈和滾動(dòng)體的陶瓷材料是軸承級的氮化硅材料。
- Hybrid bearings have rings of bearing steel and rolling elements of bearing grade silicon nitride (Si3N4). 陶瓷混合軸承具有軸承鋼的套圈和軸承級氮化硅的滾動(dòng)體(Si3N4)。
- Under insufficient lubrication conditions there is no smearing between silicon nitride and steel. 在潤滑不充分的條件下,氮化硅和鋼之間不會(huì )發(fā)生沾污。
- It consists of fine elongated grains of beta-silicon nitride in a glassy phase matrix. 它是由位于玻璃相基中的貝塔氮化硅細長(cháng)晶粒構成。
- On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT. 與此同時(shí),制備高質(zhì)量的柵絕緣層用氮化硅薄膜也是制備高性能薄膜晶體管(TFT)這一課題的需要。
- The microwave synthesis approach was applied to the preparation of manganese nitride from metal manganese. 以金屬錳為原料應用微波能高溫合成技術(shù)進(jìn)行了氮化錳的合成。
