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- Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅層-在絕緣層下部的晶圓片,是頂部硅層的基礎。
- Hot plate with silicon wafer lowered to heating position. 加熱板與矽晶圓降低至加熱位置。
- Mechanical Test Wafer - A silicon wafer used for testing purposes. 機械測試晶圓片-用于測試的晶圓片。
- Contamination Particulate - Particles found on the surface of a silicon wafer. 沾污顆粒-晶圓片表面上的顆粒。
- Hot plate with silicon wafer in initial configuration (before heating). 加熱板與矽晶圓在啟始狀態(tài)(加熱前)。
- SiO2, an insulator, can be formed by oxidation of surface of the silicon wafer. 經(jīng)凈化的晶棒接著(zhù)用機械方法切成薄片.;這些切片就叫做晶圓
- A New Method of Resistless Photochemical Etching for Silicon Wafer[J]. 引用該論文 楊杰;劉焰發(fā);村原正隆.
- Third Order Nonlinear Optical Properties of Bacteriorhodopsin Langmuir-Blodgett Multilayer Film[J]. 引用該論文 祁春媛;劉康俊;黃燕萍;錢(qián)士雄.
- Therefore, a new nanocrystalline/microcrystalline diamond (NCD/MCD) multilayer film has been deposited and studied in this thesis. 因此，本論文研制了納米晶/微晶金剛石多層膜。
- A covalently attached photoalignment film based on self-assembled multilayer film was prepared by twice irradiation of UV light. 通過(guò)兩次光照法制備了一種基于共價(jià)鍵結構的自組裝光控取向膜。
- Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer. 沾污區域-部分晶圓片區域被顆粒沾污,造成不利特性影響。
- The results show that the precise dimple grinding method is a proper method to evaluate the antiwear properties of thin film coatings.TaN/NbN nano multilayer film shows a bett... 結果表明 ,精密凹坑研磨儀是一種適用于評價(jià)薄膜鍍層耐磨性的方法。
- ICs, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer. 光刻技術(shù)應用到集成電路制造中，就是將掩模版的幾何圖形轉移到硅片表面的工藝過(guò)程。
- Chip: The individual circuit or component of a silicon wafer, the leadless form of an electronic component. 芯片:單回路或元件的硅晶元,無(wú)引腳的電子元件。
- Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes. 測試晶圓片-用于生產(chǎn)中監測和測試的晶圓片。
- The surfactant-capped CdS nanoparticulate multilayer film has been fabricated by the Langmuir-Blodgett technique. CdS LB film was investigated by Fourier transform infrared spectroscopy, small angle X-ray diffraction, XPS and atomic force microscopy. 采用 LB膜技術(shù)制備了表面活性劑包埋的硫化鎘納米粒子多層膜 ,并利用傅里葉紅外光譜、X射線(xiàn)光電子能譜、原子力顯微鏡和小角 X射線(xiàn)衍射對其結構進(jìn)行了表征。
- The influences of technology parameters on silicon wafer surface quality when slicing are studied theoretically. 對鋸切硅片時(shí)各工藝參數對切片表面質(zhì)量的影響規律進(jìn)行了理論研究。
- Due to the diffusion of amorphous carbon in interface layer, the structure of Mo/Si/C multilayer film was changed, and the double diffraction peaks during low-angle X-ray diffraction (LAXD) were observed. 同時(shí),由于非晶C在高溫條件下的擴散導致薄膜結構發(fā)生變化,觀(guān)測到薄膜的小角衍射曲線(xiàn)中出現并臨的雙衍射峰結構。
- A silicon wafer with micro channels and a pyrex glass with hot films have been bonded to form this sensor. 采用硅微加工技術(shù)制作微管道,在玻璃上通過(guò)濺射方法形成鈦鉑合金熱膜,最后將兩者鍵合封裝,形成埋置了熱膜的封閉微管道。
- Ellipsometer is widely used in the field of studying the thickness, refracive index, extinction coefficient of the multilayer film and some optical properties of graded layer are also given. 主要研究變角度變波長(cháng)橢圓偏振儀測量多層膜每層膜厚和光學(xué)特性,并給出了光學(xué)梯度薄膜的梯度特性。
