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- Factors Contributing to the Decline in CVD Deaths? 哪些工作對心血管病死亡率下降起到作用?
- The higher value is comparable to those obtained in CVD epitaxy. 這個(gè)高的數值可以和從化學(xué)氣相淀積外延得到的數值相比擬。
- CC genotype was not found both in CVD and control group. 在研究總對象中沒(méi)有發(fā)現CC基因型。
- They did find that CVD event rate was reduced by statins (RR=0.82). 但心血管疾病的發(fā)生率在使用他汀后有所下降。
- Adhesion is a basic factor for the application of CVD diamond film. 附著(zhù)性能的高低是CVD金剛石膜應用的基本問(wèn)題之一。
- Underweight was not linked with cancer or CVD mortality. 體重過(guò)輕與癌癥或心血管病死亡率無(wú)關(guān)。
- A new technology for manufacturing CVD diamond thick film cutters is presented. 提出一種制作CVD金剛石厚膜焊接刀具的新工藝。
- Effects of the CVD temperature and heat treatment were studied in detail. 考察了小同沉積溫度以及退火處理對沉積結果的影響。
- The wearresistance of TA1 was improved by chemical vapor deposition(CVD) to enhance the TA1 properties. 為提高TA1表面的耐磨性能,在TA1表面采用化學(xué)氣相沉積(CVD)表面處理。
- However, it is unknown if serum phosphorus levels influence vascular risk in individuals without CKD or CVD. 然而無(wú)機磷水平在沒(méi)有慢性腎病或心血管疾病的個(gè)體中是否影響其血管事件的危險仍然不明確。
- Because of high density,high ionization,low pressure and small damage,ECR plasma can bewidely used in RIE,Plasma CVD and Sputtering. 由于ECR微波等離子體技術(shù)具有密度高、電離度大、工作氣壓低、表面損傷小等特點(diǎn)，在反應離子刻蝕（RIE）、等離子體化學(xué)氣相淀積（CVD）和濺射方面具有廣闊的應用前景。
- Objeetive:To improve the life quality of acuate cerebralvascular disease(CVD)patients and search for new approaches in CVD nursing . 目的：提高急性期后腦血管病患者的生活質(zhì)量，尋找腦血管病康復護理的新途徑。
- CN x films were deposited on the Si(100) substrates with microwave plasma CVD method. 沉積在Si（100）基片上的CNx膜是用微波等離子體化學(xué)氣相沉積法（MWPCVD）制備的。
- CVD BN ceramics has been prepared by using BCl_3 and NH_3 as gaseous raw materials. 以BCl_3和NH_3為原料氣體,制備了化學(xué)氣相沉積(CVD)BN。
- The paper has reviewed the latest development and mechanism of carbon nanotubes enhancement of CVD diamond nucleation. 綜述了近年來(lái)在不同基底上用碳納米管來(lái)增強化學(xué)氣相沉積金剛石成核的研究進(jìn)展,并就碳納米管增強CVD金剛石形核的機制進(jìn)行了討論。
- Carbon nanotubes(CNTs)were prepared from acetylene at 923 K with Ni as catalysts by chemical vapor deposition(CVD). 以乙炔為原料氣,采用Ni粉為催化劑,在923K下,由化學(xué)氣相沉積法(CVD)制得了碳納米管。
- WT5BZ]Using H 2,CH 4,BCl 3 as raw materials,carbon fibers were coated with B 4C by CVD method. 以 H2 ,CH4,BCl3為原料氣 ,用化學(xué)氣相沉積 (CVD)法在碳纖維表面連續涂覆 B4C。
- The pretreatment methods of cemented carbide substrate and their effects on CVD diamond film were mainly summarized. 摘要本文重點(diǎn)對近年硬質(zhì)合金基體表面預處理方法及其對CVD金剛石膜沉積的影響進(jìn)行了綜述。
- The continuous SiC fibers coated with B 4C using chemical vapour deposition(CVD) were made. 采用化學(xué)氣相沉積 (CVD)方法 ,在連續SiC纖維表面沉積一層B4C涂層。
- SEM and XRD are used to determine microstructure and crystallographic form of SiC coatings by CVD. 利用化學(xué)氣相沉積工藝制備了SiC涂層 ,對涂層進(jìn)行了SEM及XRD分析。
