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- A transistor memory cell can be made with any number of terminals. 晶體管存貯單元端點(diǎn)的數量是不受限制的。
- Characterize standard logic cells and memory cells. 提取標準邏輯單元和存儲電路的參數。
- The memory cells may be multistate memory cells. 該存儲單元可以是多狀態(tài)存儲單元。
- The upper layer forms an open cell matrix when exposed to a jet fire to permit passage of gasses from the lower layer to ambient. 上層當暴露于噴射火焰時(shí)形成開(kāi)孔基體，使得氣體能經(jīng)下層通到環(huán)境中。
- The amyloplast envelope began to degrade and released starch granules into cell matrix when amyloplast was full of starch granules. 當淀粉體被淀粉粒所充滿(mǎn)，淀粉體被膜降解消失，釋放淀粉粒到細胞基質(zhì)中。
- Osteopontin is a member of the small integrin-binding glycoprotein family and it mediates varied kinds of biological behaviors as an extra cell matrix. 骨橋蛋白是整合素結合糖蛋白家族成員,作為一種細胞外基質(zhì)介導多種生物學(xué)的行為。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不穩定的內存單元已將70(二進(jìn)制為1000110)更改為6(二進(jìn)制為000110),則會(huì )發(fā)生此問(wèn)題。
- The intervertebral disc degeneration is displayed by the changes of the cell proliferation and the cell matrix's metabolism, which includes collagen and proteoglycan. 摘要椎間盤(pán)退行性病變表現為細胞數量和細胞基質(zhì)代謝如膠原、蛋白聚糖等代謝的改變。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通過(guò)實(shí)驗研究了閃速存儲器存儲單元中應力誘生漏電流(ILC)產(chǎn)生機理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在該程序中利用8237實(shí)現了將內存中魔幾個(gè)單元的數據復制到另外幾個(gè)存儲單元。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “極快速擬動(dòng)態(tài)非揮發(fā)性快閃記憶體之陣列結構與其執行編碼時(shí)臨界電壓自我校正方法”;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 鏡像位方案通過(guò)把每個(gè)比特存儲在一個(gè)絕緣柵兩端的方法在每個(gè)存儲單元中存儲兩個(gè)比特。
- This paper implements the pattern-driven motif finding algorithm on Cell Matrix by firstly designing the basic comparing unit and then hierarchically constructing the higher subsequence test unit and the architecture for processing one entire sequence. 基于CellMatrix結構;本文首先在晶格結構上設計基本字符比較單元;而后在此基礎上逐層構建更高層次的子序列測試單元和單條序列處理架構;從而實(shí)現了基于模式驅動(dòng)的模體發(fā)現算法.
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子計算機存儲單元的相干脫散，破壞量子態(tài)中的信息，是量子計算機難以實(shí)現的主要原因之一。
- Physical addresses are used to address memory cells in memory chips. 物理地址是用來(lái)真正訪(fǎng)問(wèn)內存單元的地址。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 設計者常常要在靈敏放大器的面積、功耗以及讀數據的速度之間折衷考慮。
- Unused memory cells following the BELL&RET command are considered free. 在電鈴&浸水使柔軟指令之后的不用記憶單元是考慮過(guò)的免費。
- Flip-flops are a key componemt and memory cells of sequential logic circuit. 觸發(fā)器是構成時(shí)序邏輯電路的存儲單元和核心部件。
- Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同時(shí)分析了柵寬與 SNM的關(guān)系 ,其結論與實(shí)驗結果一致 ,并給出了 VDSM SRAM存儲單元設計中應注意的問(wèn)題
