Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given.

 
  • 文中同時(shí)分析了柵寬與 SNM的關(guān)系 ,其結論與實(shí)驗結果一致 ,并給出了 VDSM SRAM存儲單元設計中應注意的問(wèn)題
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