您要查找的是不是：
- A New Sulfate Ion Sensitive Electrode 一種新的硫酸根離子敏感電極
- large molecular DFPase can be determined by both methods,but the activity of small molecular DFPase canonly be determined by the titration and cannot be determined by F- ion sensitive electrode. 析儀對這兩種酶催化DFP水解的產(chǎn)物進(jìn)行了定性分析。
- Under the fluorin ion sensitive response on fluorin electrodes can be obtained by potentiometry. 通過(guò)對氟離子在氟電極上電位響應,提出了電位分析法測定水中微量氟的方法。
- STUDY OF THE WEAK BREATHING SENSITIVE ELECTRODE 弱呼吸敏感電極研究
- Preparation of nano cadmium sulfide as ion sensitive material for ion-selective electrode 納米硫化鎘離子敏感材料的研制及其在離子選擇電極上的應用
- Keywords ion - sensitive electrode;Photopolymerizable membrane;all solid - state electrode;ibuprofen determination; 光固化聚合膜;離子選擇性電極;全固態(tài)傳感器;布洛芬測定;
- ion sensitive field effect transistor 離子敏感場(chǎng)效應晶體管
- ion sensitive semiconducting transistor 離子選擇半導體晶體管
- ion sensitive field effect transistor(ISFET)sensor ISFET傳感器
- Ion Sensitive Field Effect Transistor(ISFET) 離子敏場(chǎng)效應管
- Ion sensitive field effect transistor (ISFE) 離子敏感場(chǎng)效應晶體管
- Conclus ion Sensitivity low and specificity high in OTT for assessing flight sy ncope. 立位耐力試驗敏感性38.;71%25;特異性91
- ion sensitive field effect transistor (ISFET) 離子敏場(chǎng)效應晶體管
- cadmium ion sensitive thin film sensor 鎘離子敏感薄膜傳感器
- coated wire K ion sensitive field 涂絲鉀離子場(chǎng)
- Conclus ion Sensitivity low and specificity high in OTT for assessing flight sy ncope.OTT was used as a objective method for assessing flight syncope. 結論立位耐力試驗對空中暈厥的敏感性低，特異性高，可作為一種診斷空中暈厥的客觀(guān)方法。
- Keywords cobalt;ion-selective electrode;ion sensitive field effect transistor;ISFET; 鈷;離子選擇電極;離子敏感場(chǎng)效應管傳感器;
- Race relations is a sensitive issue. 種族關(guān)系是敏感的問(wèn)題。
- The electrode attached to this region. 晶體管內的電子附著(zhù)在晶體管這個(gè)區域的電子
- The following text is about the newly-developed crystall membrane iodine ion sensitive semiconductor device in which Si3N4 /SiO2 is used as the insulator film and AgI-Ag2S as sensitive film and includes an analysis of its mechanism of the sensitivity. 本文報導以Si_3N_4/SiO_4為絕緣膜;用AgI-Ag_2S晶體為敏感膜的碘離子敏感半導體器件;并對其敏感機理進(jìn)行了分析.
