The following text is about the newly-developed crystall membrane iodine ion sensitive semiconductor device in which Si3N4 /SiO2 is used as the insulator film and AgI-Ag2S as sensitive film and includes an analysis of its mechanism of the sensitivity.

 
  • 本文報導以Si_3N_4/SiO_4為絕緣膜;用AgI-Ag_2S晶體為敏感膜的碘離子敏感半導體器件;并對其敏感機理進(jìn)行了分析.
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