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- Gallium Nitride - New Material for Microwave and Optoelectronics. 氮化鎵-微波與光電元件的新材料。
- Jelenski, A."Gallium Nitride - New Material for Microwave and Optoelectronics. "氮化鎵-微波與光電元件的新材料.
- Because of the applications in UV-Blue light emitting devices, gallium nitride materials have drawn much attention. 摘要:氮化鎵材料因其在藍紫外光發(fā)光元件上的應用而廣受各界注意。
- A gallium nitride LED on sapphire has a typical internal quantum efficiency of around 70%. 藍寶石上制作的氮化鎵LED內部量子效率高達70%25；
- Belcher is trying to get her phage to attach to safer particles made of gallium nitride, indium nitride or some other semiconductor. 貝契想在她的噬菌體上連接其他較安全的粒子，如氮化鎵、氮化銦或其他半導體。
- My investigation will focus on cobalt doped gallium nitride nanowires with their structure influencing and magnetic nature. 一維奈米材料在過(guò)去的研究往往集中在其特殊的光學(xué)性質(zhì)以及電學(xué)性質(zhì)上，鮮少有關(guān)于磁性方面的深入研究。
- They parted for Yang, who peered into the eyepiece to witness a brilliant blue-violet flash emanating from a glassy chip of gallium nitride (GaN). 他們讓了個(gè)位子給楊祖佑，他透過(guò)目鏡，目睹了一片光滑的氮化鎵（GaN）放射出亮麗的藍紫色光芒。
- The groups from U.C.S.B. and Rohm are developing a new way to grow the crystalline layers of gallium nitride and related alloys that make up a laser diode. 加州大學(xué)圣巴巴拉分校和羅姆公司的研究團隊正在開(kāi)發(fā)新技術(shù)，以制作氮化鎵結晶層以及構成雷射二極體的相關(guān)合金。
- Such devices, which would be much cheaper than conventional LEDs composed of gallium nitride or gallium arsenide, are currently held back by their low rates of light emission. 這類(lèi)裝置的價(jià)格會(huì )比氮化鎵或砷化鎵制成的傳統LED便宜許多，但是目前的發(fā)展仍然受限于發(fā)光效率過(guò)低。
- In an encouraging sign for carbon electronics, the highly mobile positive charges even outpaced the electrons in the semiconductors silicon carbide and gallium nitride. 任職于瑞典烏普沙拉大學(xué)的本計畫(huà)主持人艾斯伯格認為，大致上來(lái)說(shuō)，更高的遷移速率，意謂著(zhù)在半導體元件中更少的能量損失以及更快的切換時(shí)間。
- Parameters of contact layer are determined when deformation of contact layer is equal to initial gap which is proposed in the criterion of penstock. 另外，接觸層參數可通過(guò)其變形與規范建議的初始縫隙相匹配的原則加以確定。
- In the late 1980s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium. 20世紀80年代后葉Akasaki和他的同事們在名古屋大學(xué)通過(guò)添加少許鎂制造出首例p型氮化鎵。
- In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature. 發(fā)現在氮化鎵材料上具有室溫鐵磁性的性質(zhì)，被預期能運用在磁性記憶體的元件和積體電路的材料上。
- It is shown that the variation of contact state induces the difference of wear stress,and results in the distribution of stress in the contact layer. 接觸狀態(tài)的改變必定會(huì )造成實(shí)際摩擦應力的不同,這也是形成接觸層應力分布差異的原因之一。
- A simple route for the synthesis of unique 1D nanostructures, including brush-like gallium nitride nanostructure, oriented amorphous silicon nanowires and In@SiO2 nanocables, was developed on the basis of VLS and SLS mechanisms. 藉由VLS與SLS機制，我們成功地合成出具有特殊方向性的刷狀氮化鎵奈米晶體、非晶相二氧化矽奈米線(xiàn)，及二氧化矽包覆銦之一維奈米結構。
- One phage is specific for the semiconductor gallium arsenide and is insensitive to its close cousin gallium nitride, giving it a power of discrimination that might allow it to detect flaws in chips. 例如有一種病毒就對砷化鎵半導體具有專(zhuān)一性，但對其近親氮化鎵卻毫無(wú)反應，這種辨識力或許可用來(lái)偵測晶片的瑕疵。
- Because the atomic lattice structure of gallium nitride is better matched to sapphire than it is to silicon, making LEDs on silicon without distortions has proved extremely tricky. 同硅相比，氮化鎵的原子晶格結構與藍寶石更加匹配，因此在硅材料上生產(chǎn)LED而保持不變形，相當棘手。
- Research on gallium nitride, a material that showed promise for blue LEDs, began in the late 1960s at the Radio Corporation of America (RCA), which wanted to use LEDs to create flat-panel televisions. 對于氮化鎵的研究由美國無(wú)線(xiàn)電公司（RCA）于20世紀60年代開(kāi)始，他們想利用LED做平面電視機，這種材料給藍色LED帶來(lái)生機。
- GROWTH OF p-TYPE Ga_(0.47)In_(0.53)AS CONTACT LAYER p型Ga_(0.;47)In_(0
- Hydrogenated gallium nitride cluster 氮化鎵氫化物
