In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

 
  • 發(fā)現在氮化鎵材料上具有室溫鐵磁性的性質(zhì),被預期能運用在磁性記憶體的元件和積體電路的材料上。
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