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- The floating gate can only be accessed though another transistor, the control gate. 浮動(dòng)門(mén)雖然只能進(jìn)入另一個(gè)晶體管,控制閘門(mén)。
- Most of the radiation is not energetic enough to penetrate the gate electrode, so damage is confined to the periphery of that electrode. 大多數輻射沒(méi)有足夠的能量來(lái)穿透柵電極，因此，損傷被限制在電極的周?chē)?/li>
- Each bit of data in a flash memory device is stored in a transistor called a floating gate. 每一個(gè)比特的數據儲存在快閃記憶裝置稱(chēng)為浮柵晶體管。
- A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. 存儲單元陣列包括多個(gè)存儲單元，每一存儲單元具有控制柵和浮動(dòng)柵。
- Tunneling allows voltage to flow from the control gate to the floating gate through the dielectric layer of oxide which separates them. 允許從隧道流電壓控制的浮動(dòng)柵柵絕緣層氧化物通過(guò)分隔他們。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 設計者常常要在靈敏放大器的面積、功耗以及讀數據的速度之間折衷考慮。
- By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT=1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. 在國內首次將等效氧化層厚度為1·7nm的N/O疊層柵介質(zhì)技術(shù)與W/Ti N金屬柵電極技術(shù)結合起來(lái);用于柵長(cháng)為亞100nm的金屬柵CMOS器件的制備.
- By adopting the structure of the invention, the cusps of the floating gate become sharper, thus greatly improving the durability of the floating gate flash memory device. 本發(fā)明通過(guò)上述結構，使得浮柵的尖角更尖，從而大大的提高了浮柵閃存器件的耐用度。
- floating gate avalanche injection type MOS memory 浮柵雪崩注入MOS存儲器
- Due to the downscaling of device dimensions in CMOS technology, the metal gate electrodes will be required to replace conventional Poly-silicon gate. 摘要傳統多晶硅柵已不能適應CMOS器件尺寸進(jìn)一步減小的要求，因此需要金屬柵極材料來(lái)取代多晶硅。
- floating gate avalanche injection mos 浮柵雪崩注入型金屬氧化物半導體,浮動(dòng)柵雪崩注入型金屬氧化物半導體
- floating gate avalanche injection MOS memory 浮動(dòng)柵雪崩注入型MOS存儲器
- floating gate avalanche injection 浮動(dòng)柵雪崩注入
- floating gate avalanche injection MOSFET 浮柵雪崩注入MOS場(chǎng)效晶體管
- nonvolatile floating gate memory 非揮發(fā)浮柵存儲器
- distributed floating gate amplifier 分布浮柵放大器
- A man appeared at the castle gate in the guise of a woodcutter. 一個(gè)男子打扮成樵夫的模樣出現在城堡的門(mén)口。
- The electrode attached to this region. 晶體管內的電子附著(zhù)在晶體管這個(gè)區域的電子
- The ship ran a foul of the floating seaweed. 船和漂流的海藻糾纏在一起。
- Did you remember to padlock the gate? 你是否記得用掛鎖把大門(mén)鎖上？
