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- The drain current Ids depends on Vgs with an index of 2.5. 實(shí)驗結果表明改進(jìn)的模型更精確;Ids與Vgs的呈2.;5次方的指數關(guān)系
- A new type of over current protection system of MCCB was Introduced. 介紹了一種新型塑殼斷路器的過(guò)電流保護系統。
- The low quiescent drain current of the device insures good regulation when this method is used. 當這個(gè)方法被使用時(shí),設備的低的靜止的排水管電流保險好規則。
- By these ways, we successfully improve drain current and mobility of NMOS and PMOS. 此外,本論文并探討應變矽在低溫時(shí),不同散射機制對電性的影響。
- By this way, we successfully improve drain current and mobility of NMOS into 12% and 6%, respectively. 利用此方法,我們成功提高NMOS的汲極電流與載子遷移率,提升幅度分別為12%25與6%25。
- The spectrum of the whole drain current waveform (Fig. 21) is presented in Fig. 23. 全部漏極電流波形產(chǎn)生的電磁干擾頻譜(圖21)呈現在圖23。
- As it can be seen the drain current and drain to source voltage slopes can be adjusted simply using the external gate resistor during turn on and off transients. 顯而易見(jiàn),開(kāi)通和關(guān)斷過(guò)程的漏極電流、漏源極電壓變化速率可以簡(jiǎn)單的通過(guò)外置柵極驅動(dòng)電阻進(jìn)行調整。
- Inverse time current protection is judged by calculating the RMS of current and adding up heating effect. 長(cháng)延時(shí)采用計算電流真有效值,累計熱效應判別。
- The peak values of the drain current have been varied in discontinuous (2A, 6A, 11A) and continuous (2A, 6A) conduction modes. 漏極的峰值電流被設定為斷續電感電流模式下的2安培、6安培、11安培和連續電感電流模式下的2安培。
- Instead, pages adopt the current protection level of the database whenever they are written next. 相反,每當下一次寫(xiě)入時(shí),這些頁(yè)才會(huì )采用數據庫的當前保護級別。
- In this work, one emphasis is put on the nonlinear modeling of LDD MOSFET, wherein the drain current Ids is the key of the MOS equivalent circuit. 首先通過(guò)分析總結典型的短溝MOS器件模型的建模原理和適用范圍,建立了適用于深亞微米、超深亞微米LDD NMOSFET的簡(jiǎn)捷器件模型(Compact model)。
- Therefore, we successfully improve drain current and carrier mobility of NMOS, and the increasing rates are 22% and 30% respectively. 利用此方法,我們成功提高NMOS的汲極電流與載子遷移率,提升幅度分別為22%25與30%25。
- The current protection focuses on the administrative practice, but conveys no private rights to the right holders. 目前中國進(jìn)行的主要是行政保護式的公法保護,但在私法保護上卻沒(méi)有什么依據。
- A model of drain current degradation of DSM NMOSFET devices induced by HCI and implementation in circuit reliability simulation is proposed. 摘要提出一種深亞微米NMOSFET的熱載流子注入下漏電流退化模型及其電路退化仿真方法。
- This paper concentrates on the development of 10-35kv adaptive current protection set WXB-32B. 本論文全面介紹了10-35kv饋線(xiàn)自適應保護裝置WXB-32B的研制成果。
- The analysis of the drain current of the primary switch will be done in the same way. Fig. 21 demonstrates a typical drain current in a DCM flyback. 對一次側開(kāi)關(guān)的漏極電流進(jìn)行分析采用相同的方法。圖21展示出一個(gè)工作于電感電流斷續模式反激變換器的典型漏極電流。
- Internal circuit protection includes short-to-ground, shorted load, thermal shutdown with hysteresis, and crossover current protection. 內部電流保護包括接地短路、短路負載、因滯后而引起的過(guò)熱關(guān)機與交叉電流保護。
- Internal circuit protection includes thermal shut down with hysteresis, transient-suppression diodes and crossover current protection. 內部電路保護包括因滯后引起的過(guò)熱關(guān)機、瞬態(tài)抑制二極管及交叉電流保護。
- Over current protection circuit design helps to control short circuit in loading and over current promptly to avoid further damage. 過(guò)流式保護電路設計,能及時(shí)控制負載的短路及過(guò)流情況,免除進(jìn)一步損壞。
- The reasons why reverse current protection is not necessary in rectifiers of direct current traction substation are described. 摘要通過(guò)分析,闡述了直流牽引變電所內的整流器不必設置逆流保護的理由。