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- The upshift of valence band edge and the downshift of conduction band edge under tensile strain are responsible for that. 這是因為外加伸展應力使得矽的價(jià)電帶往上移動(dòng)以及導電帶向下移動(dòng)造成。
- Black with yellow band edge in white. 船身黑色,在黃色色帶的兩邊是白色的細條。
- Selects or disables the VFO band edge limiting for the current band. 設置當前波段的VFO邊界限制功能。
- The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band. 填有電子而能量最高的能帶稱(chēng)為價(jià)帶，相鄰的更高能帶稱(chēng)為導帶。
- Calculation of hetero junction conduction band for a field-assisted InP/InGaAsP/InP semiconductor photocathodes[J]. 引用該論文 李晉閩;郭里輝;王存讓;張工力;侯洵.
- The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements. 利用反射及光激螢光量測能隙邊緣的激子躍遷。
- The characteristics of conduction band and forbidden band of photonic crystals are investigated with a macroscopical chord vibrating system indirectly. 得到了類(lèi)比于光子晶體的亥姆霍茲方程的弦振動(dòng)系統的本征值方程,并利用該方程研究了光子晶體的導帶和禁帶特征。
- Semimagnetic semiconductor Zn_(1-x)Mn_xSe (x= 0.01) exhibits a broad band absorption inthe region of band edge. 室溫下半磁半導體Zn_(1-x)Mn_xSe(x=0.;01)具有較寬的帶邊吸收
- Thus, optical-wavelength light can excite an electron at an impurity atom from one discrete state to another without knocking it all the way to the conduction band. 因此，一般的光波可以將雜質(zhì)原子里的電子從一個(gè)離散的能態(tài)激發(fā)到另一個(gè)，而不會(huì )把它打到更高的導帶。
- This form of repair, which will mainly after wandering for tape or other reasons arising from the band edge damage repair. 這種形式的修補器,主要用于膠帶跑偏后或其它原因引起的帶邊損壞的修補。
- The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn. 同樣方法測量的530nm綠峰的發(fā)光衰變規律顯示綠光主要源于導帶至OZn反位缺陷深受主能級的躍遷。
- From the PL measurement the near band edge(NBE) emission and deep-level(DL) emission are observed in unannealed AZO thin films. 未退火樣品的光致發(fā)光(PL)譜由361 nm附近的紫外帶邊發(fā)射峰和500 nm附近的深能級發(fā)射峰組成。
- The upshift of valence band edge under mechanical strain increases the majority hole concentration at the oxide/Si interface. 價(jià)電帶的向上移動(dòng)會(huì )使得氧化層以及矽的接面的電洞濃度增加。
- Blue shift appears on the absorb edgea in the absorption spectrum and also on the exciton band edge emission peaks in the luminescence spectrum. 在光致發(fā)光譜中;不僅激子直接復合產(chǎn)生的帶邊發(fā)射產(chǎn)生了藍移;而且陷阱態(tài)復合產(chǎn)生的寬帶發(fā)射也發(fā)生了藍移.
- OFF: When the VFO frequency reaches the high edge of the current band, the VFO frequency will jump to the low band edge of the next band (or vice versa). 關(guān)閉:當VFO頻率到達當前波段的上限時(shí),頻率會(huì )跳到下一個(gè)波段頻率的下限(反之亦然)
- The energy interval between the bottom of the conduction band and interstitial zinc level is 0.4eV. As for zinc vacancy, oxide antisite, oxygen vacancy, and interstitial oxygen,the energy intervals are 3.06eV, 2.38eV, 1.62eV and 2.1eV, respectively. 鋅填隙缺陷在距離導帶底0.;4eV處產(chǎn)生淺施主能級;鋅空位缺陷在價(jià)帶頂0
- UV-vis diffuse reflectance spectra showed that the absorption of TiO2-S-Fe in the visible light district was strengthened and the band edge moved to longer wavelength obviously. UV-vis漫反射表明,TiO2-S-Fe對可見(jiàn)光吸收增強,吸收帶邊明顯紅移;
- It is pointed out that on the basis of the theory given, the positions of the conduction band minima and the anisotropy of the donor effective mass wave function can be precisely determined by the method of ENDOR and its pressure effects. 指出了利用雙共振方法及其壓力效應有可能測定導帶底的波矢及有效質(zhì)量波函數的各向異性分布。
- This method is especially suited for getting band edge states in the framework of linear scaling self-consistent density functional or Hartree-Fock theory. 我們提出了一個(gè)優(yōu)雅的解決周期體系中均勻電場(chǎng)的辦法。與密度矩陣微擾理論結合起來(lái)，我們提供了一個(gè)計算介電常數的線(xiàn)性標度算法。
- The American ALBANY series multi-layer non-attaches Kieb not meets the bee filter press net belt for the bottom acupuncture blanket and the silica gel pressure conduction band and German BGK. 美國ALBANY系列多層無(wú)接頭基布為底的針刺呢毯及硅橡膠壓力導帶及德國B(niǎo)GK無(wú)接蜂壓濾機網(wǎng)帶.
