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- A novel BWO with photonic band gap structure[J]. 引用該論文 陳波;錢(qián)寶良;鐘輝煌.
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶體是一種具有光子帶隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一種新型微帶光子帶隙結構。
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 結果表明;所制得的樣品為四方結構的多晶CuInS_2薄膜;Cu/In比接近化學(xué)計量比;其光學(xué)禁帶寬度為1.;50eV。
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光學(xué)帶隙隨摻雜原子分數的提高從3.;21 eV增大到3
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太陽(yáng)光的吸收要求材料的最佳帶隙在1.;45eV左右;不過(guò)CuInSe_2的帶隙為1
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 設計了幾種一維光子晶體光通信器件。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展應力之下，我們觀(guān)察到矽的能隙縮減還有光強度的增加。
- Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可調光子晶體由于其潛在的應用價(jià)值成為現今光子晶體研究中的一個(gè)熱點(diǎn)。
- There are resonance modes in the photonic band gap when defects are introduced to the integrity photonic crystals. 完整二維光子晶體中引入點(diǎn)缺陷后,在光子晶體禁帶中會(huì )有共振模出現;
- The band gap's broaden is apparent when the larger refractive index layer is graded. 改變高折射率層的幾何厚度，光子帶隙的拓寬更為顯著(zhù)。
- Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效應,半導體納米晶的能帶寬隨粒子大小而改變。
- All internal reference voltages are derived from a temperature compensated and trimmed, on-chip band gap circuit. 所有的內部參考電壓都做了溫度補償和平衡，芯片內置帶隙電路。
- The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC. 研究表明， 氧化鈦薄膜具有寬禁帶的半導體特性，血液相容性?xún)?yōu)于熱解碳。
- The photonic band gap of 1-D photonic crystals with graded single refractive index layer is investigated using the method of the characteristic matrix. 摘要利用特征矩陣方法研究了一類(lèi)周期厚度變化的－維光子晶體的能帶特性。
- We can control the photonic band gap via changing the geometric thickness according to the requirement during designing the photonic crystal. 在設計光子晶體時(shí)，可以根據需要，通過(guò)緩慢改變光子晶體某一折射率層的和何厚度可實(shí)現對光子帶隙的控制。
- The a-D films have more than 85% sp3 bonding. Density of the films is more than 3 glcm3. Band gap of 2.4 eV is obtained. Hardness is about 30 60 GPa. 其SP~3鍵的含量超過(guò) 85%25，密度超過(guò) 3g/cm~3;禁帶寬度達2.;4eV，顯微硬度達30~60GPa，厚200nm的薄膜表面粗糙度小于1nm。
- The absorption coefficient,band gap and activation energy of these crystallized a-Si_xC_(1-x):H films decrease whilethe dark conductivity increases. 晶化后的a-Si_xC_(1-x):H膜光吸收系數、光學(xué)帶隙和電導激活能下降;室溫電導率增加.
- The band gap structure of 1-D electromagnetic crystals was calculated by plane wave expansion(PWE) method in this paper. 用平面波展開(kāi)(PWE)法計算了一維電磁晶體的帶隙結構。
- It is found that this kind of photonic crystal can enlarge the band gap compared with ordinary structure photonic crystal. 研究表明，與通常的均勻結構光子晶體的帶隙相比，這種光子晶體能使光子帶隙拓寬。
