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- Ga2O3薄膜Ga2O3 thin films
- ZnO/Ga2O3薄膜ZnO/Ga2O3 films
- ZnO／Ga2O3薄膜ZnO/Ga2O3 thin films
- 薄膜film
- Ga2O3/In2O3Ga2O3/In2O3
- 薄膜的pellicular
- 塑料薄膜plastic membrane
- 采用化學(xué)氣相沉積(CVD)法,以甩涂在Si (111)襯底上的Ga2O3薄膜和NH3作為原料,在無(wú)催化劑條件下成功制備出GaN納米線(xiàn)。use of chemical vapor deposition(CVD) method, GaN nanowires were synthesized via direct reaction of the films of Ga2O3 which were spined on the Si substrate with flowing ammonia without any catalyst .
- 薄膜開(kāi)關(guān)thin film switch
- ZnO薄膜ZnO thin film
- 薄膜電池hull cell
- 薄膜材料thin-film material
- p-ZnO薄膜p-ZnO film
- Tb摻雜ZnO薄膜和高K柵介質(zhì)Er_2O_3薄膜的制備及特性研究The Growth and Properties of Tb-doped ZnO Films and High K Dielectric Er_2O_3 Films
- ZnO外延薄膜ZnO epitaxial thin film
- ZnO納米薄膜ZnO nanometer thin film
- ZnO多晶薄膜ZnO polycrystalline thin films
- 外延ZnO薄膜epitaxial ZnO films
- 納米ZnO薄膜nano-ZnO film
- 絨面ZnO薄膜textured ZnO film
