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- Pt-GaAs Schottky barrier APDs have been investigated. Pt-GaAs肖特基勢壘雪崩光電探測器已研制成功。
- GaN Schottky Barrier Ultraviolet Detector GaN基肖特基結構紫外探測器
- As an example, Schottky barrier diode characteristics is simulated using this method. 以肖特基勢壘二極管為例，應用該方法，實(shí)現了高接觸勢壘情形下的正反向電流模擬。
- The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). 基于 Ti Si2 低電阻率的優(yōu)點(diǎn) ,采用 Ti制作肖特基二極管。
- The electron irradiation-induced failure mechanism of n-type Au/GaN Schottky barrier UV detectors is investigated. 研究了n型Au/GaN肖特基勢壘紫外光探測器的電子輻照失效機理。
- And the cautionary measures and the universal maintain methods for Au-Si surface barrier detector have been specified. 同時(shí),還敘述了金硅面壘探測器的維護保養方法和使用注意事項。
- Yet another object is to form a Schottky barrier between a semiconducting material and an active electrode. 還有另一個(gè)目的是在半導體材料與有源電極之間形成肖特基勢壘。
- When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 當我們在矽基板上形成矽化鎳時(shí)，將會(huì )有蕭特基接面存在其間。
- The electron beam induced current (EBIC) character of palladium silicide-silicon (P-type)Schottky Barrier Diode (SBD) is observed. 本文用EBIC法對SBD元件進(jìn)行了觀(guān)測。
- When the Schottky barrier height(Eb)is higher than 0.6 eV,any increase in Eb can result in apparent reduction in the DSSC maximum power output. 當TiO2/TCO的肖特基勢壘(Eb)大于0.;6eV時(shí);DSSC的最大功率輸出值隨Eb的增大而明顯降低。
- The typical structure and fabrication technology of the iridium silicide Schottky barrier infrared detectors(IrSi-SBIRDs)are discussd. 本文討論了硅化銥肖特基勢壘紅外探測器(IrSi-SBIRD)的典型結構和其制作技術(shù);
- The mean Schottky barrier height and lowest ideality factor were found to be 1.24eV and 1.03, respectively, as measured by (I - V). 電流 -電壓測量得到肖特基勢壘平均高度和理想因子分別為 1 .;2 4 e V、1
- Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二極管D1和D2，而不是普通二極管，為的是減少總線(xiàn)上低狀態(tài)電壓，改進(jìn)噪聲極限。
- One proposed that the formation mechanism of IrSi/Si Schottky barrier should be correlated with the chemical bonds between IrSi and Si atoms at interface. 提出了IrSi/Si肖特基勢壘形成機理與界面處IrSi和Si原子的化學(xué)鍵密切相關(guān)。
- The structure features operation principle of charge sweep device(CSD) and their application in the Schottky barrier infrared focal plane array(SBIFPA) are reviewed in this paper. 本文介紹了CSD圖像傳感器的結構、特點(diǎn)、工作原理及其在肖特基勢壘紅外焦平面列陣(SBIFPA)中的應用情況。
- In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss. 同步整流技術(shù)采用低導通電阻的MOS管代替導通壓降相對較大的快恢復二極管或肖特基二極管,大大減小了輸出整流損耗,效率相對提高。
- The Schottky barrier height is increased, and the ideality factor is decreased to unity with decreasing the Pd grain size and particle size distribution. 論文后段則探討以無(wú)電鍍法制備之鈀/砷化鎵以及鈀/氧化層/砷化鎵元件于氫氣感測效果之差異，并探討不同鈀膜微結構對于氫氣感測性能之影響。
- Effects of Electron Irradiation on n-GaN Schottky Barrier UV Detector n-GaN肖特基勢壘紫外光探測器的電子輻照效應
- Using the processes with lowest formed damage and AuGeNi/Au/GaAs ohmic contact, Al/AlGaAs Schottky barrier, polyimide pro-tecting film, we have developed the InGaAs/AlGaAs PM-HEMT. 采用低應力、低損傷工藝程序,以AuGeNi/Au形成源漏歐姆接觸,Al形成柵肖特基勢壘接觸,聚酰亞胺介質(zhì)為鈍化膜,制成了InGaAs/AlGaAs贗配HEMT。
- The circuit is composed of four doubler circuits using four Schottky barrier diodes (HP-HSMS-8102). A RF-to-DC conversion efficiency of 45.4% has been achieved at an input power level of 24.5 dBm with 300W DC load. 本文設計的整流裝置采用四個(gè)HP-HSMS-8102肖特基二極管組成四個(gè)并聯(lián)的倍壓電路;在24.;5 dBm輸入功率下(直流負載為300W)測得其整流效率達到了45
