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- MOCVD反應器MOCVD reactor
- 壁面特性對徑向三重流MOCVD反應器壁面溫度分布的影響Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets
- MOCVD反應器設計transport phenomena
- 徑向三重流MOCVD反應器輸運過(guò)程的數值模擬Numerical Study of Transport Phenomena in a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets
- MOCVDmetal-organic chemical vapor deposition
- 反應器參數敏感性parametric sensitivity of reactor
- LP-MOCVDLP-MOCVD
- AR反應器annular reactor
- 液態(tài)源MOCVDLS-MOCVD
- IC反應器IC reactor
- MOCVD裝置的微機控制A CONTROL SYSTEM BASED AN MICROCOMPUTER FOR MOCVD
- 雙反應器dual reactor
- 金屬有機化學(xué)氣相沉積（MOCVD）MOCVD
- SBR反應器SBR reactor
- MIC反應器MIC reactor
- InP摻雜超晶格的MOCVD生長(cháng)與表征MOCVD GROWTH AND CHARACTERIZATION OF InP DOPING SUPERLATTICES
- 光反應器photoreactor
- 金屬有機物化學(xué)氣相沉積（MOCVD）metalorganic chemical vapor deposition(MOCVD)
- 涓流床反應器trickle bed reactor
- MOCVD外延碲鎘汞薄膜的生長(cháng)工藝選擇The Choice of Growth Technology for HgCdTe Epitaxial Growth by MOCVD
