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- Ge組分Ge profile
- Raman散射的峰位不僅與 Ge組分有關(guān) ,而且與其中的應力狀態(tài)有關(guān) . 在完全應變和完全弛豫的情況下 ,Si1- x Gex 層中的 Si- Si振動(dòng)模式相對于襯底的偏移都與 Ge組分成線(xiàn)性關(guān)系 .There is a linear Ge composition dependence of the Si|Si optical phonon mode shift,which is relative to the Si substrate for both fully relaxed and fully strained SiGe layers, as is used to calculate the extent of stress relaxation combined with the measured Raman shift.
- 分minute
- 組to form
- 分頁(yè)pagination
- 拆分split
- 分時(shí)time-sharing
- Zn組分Zinc composition
- 全組分all-components
- 三組分three-component
- COD組分COD components
- In組分indium content
- NOM組分isolated NOM fractions
- 7S組分11S
- 四組分4 components
- 11S組分7S
- Al組分A1 composition
- 兩組分solid particles
- RNA組分RNA ingredient
- 二組分two solid phases
